Method and device for cleaning substrates

Patent metadata

Field	Value
Publication number	US-12393129-B2
Application number	US-202418671174-A
Country	US
Kind code	B2
Filing date	May 22, 2024
Priority date	Mar 26, 2021
Publication date	Aug 19, 2025
Grant date	Aug 19, 2025

Abstract

In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device comprising:
retrieving a substrate from a substrate storage;
transferring the substrate to a cleaning device;
inspecting a surface of the substrate;
generating a map of one or more particles on the surface of the substrate, wherein the map includes particle locations and the map includes particle sizes;
consecutively cleaning the one or more particles from the surface of the substrate in the cleaning device, by moving the substrate according to the map and by exposing the surface of the substrate to a plasma wind stream at an oblique angle with respect to a perpendicular plane to the surface of the substrate for a predetermined exposure time to remove the one or more particles from the surface of the substrate;
adjusting a speed of the plasma wind stream based on the particle sizes;
adjusting a width of an output opening of an output port of an ambient plasma generator to adjust the speed of the plasma wind stream; and
transferring the substrate to a semiconductor manufacturing apparatus.

2. The method according to claim 1 , further comprising:
directing a gas flow of argon into the ambient plasma generator to generate the plasma wind stream.

3. The method according to claim 1 , further comprising:
imaging the surface of the substrate to generate an image of the surface of the substrate; and
analyzing the generated image of the surface of the substrate to generate the map.

4. The method according to claim 3 , further comprising:
for each particle, repeating the cleaning, the inspecting, the imaging, and the analyzing, until the one or more particles is removed.

5. The method according to claim 4 , further comprising:
determining a total time of cleaning for each particle; and
determining a size of each particle.

6. The method according to claim 5 , further comprising:
determining the total time of cleaning as the predetermined exposure time associated with the size of each particle.

7. A method of manufacturing a semiconductor device comprising:
cleaning a particle from a surface of a reticle by exposing the surface of the reticle to a plasma wind stream at an oblique angle with respect to a perpendicular plane to the surface of the reticle for a predetermined exposure time to remove the particle from the surface of the reticle;
transferring the reticle to an exposure device for lithography operation; and
projecting a layout pattern of the reticle using ultraviolet radiation onto a photo resist layer on a wafer,
wherein the cleaning of the surface of the reticle comprises:
cleaning a first region of two or more non-overlapping regions on the surface of the reticle in a treatment device by exposing the first region of the two or more non-overlapping regions on the surface of the reticle to the plasma wind stream at the oblique angle for the predetermined exposure time, wherein each non-overlapping region comprises one or more particles; and
repeat the cleaning on a second region of the two or more non-overlapping regions on the surface of the reticle to clean an entire surface of the reticle.

8. The method according to claim 7 , further comprising:
directing a gas flow of helium into an ambient plasma generator to generate the plasma wind stream.

9. The method according to claim 8 , further comprising:
applying a high intensity electric field to the gas flow of helium inside the ambient plasma generator to generate the plasma wind stream.

10. The method according to claim 9 , further comprising:
adjusting a width of an output opening of an output port of the ambient plasma generator to adjust a speed and angle of the plasma wind stream.

11. A semiconductor manufacturing system, comprising:
a controller;
a wafer exchange device having a robotic arm;
a treatment device configured to mount a reticle or a wafer; and
an exposure device,
wherein the controller is configured to:
control the treatment device to clean a particle from a surface of the reticle or the wafer by exposing the surface of the reticle or the wafer to a plasma wind stream at an oblique angle with respect to a perpendicular plane to the surface of the reticle or the wafer for a predetermined exposure time to remove the particle from the surface of the reticle or the wafer; and
control the robotic arm to transfer the reticle or the wafer from the treatment device to the exposure device for lithography processing,

wherein the treatment device further comprises a hinged wall coupled to a wind angle controller at an output opening of an output port of an ambient plasma generator, and
wherein the wind angle controller is configured to rotate the hinged wall to change a direction and speed of the plasma wind stream.

12. The semiconductor manufacturing system according to claim 11 , wherein the treatment device further comprises:
a scanning-imaging device, wherein in response to a command from the controller, a stage is configured to move under the scanning-imaging device and the scanning-imaging device is configured to capture an image of the surface of the reticle or the wafer and to transfer the captured image to an analyzer module,
wherein the analyzer module is configured to determine a map of particles on the surface of the wafer or the reticle.

13. The semiconductor manufacturing system according to claim 12 , wherein the ambient plasma generator further comprises:
a channel surrounded by a body.

14. The semiconductor manufacturing system according to claim 11 , further comprising:
a reticle library.

15. The semiconductor manufacturing system according to claim 11 , further comprising:
a scanning-imaging device configured to acquire an image of the surface of the wafer or reticle.

16. The semiconductor manufacturing system of claim 15 , wherein the scanning-imaging device is configured to send the acquired image to an analyzer module.

17. The semiconductor manufacturing system of claim 16 , wherein the analyzer module is configured to generate a map of particles on the surface of the wafer or reticle and send the map of the particles to the treatment device.

18. The semiconductor manufacturing system of claim 17 , wherein the treatment device is configured to consecutively remove each one of the particles by the plasma wind stream.

19. The semiconductor manufacturing system according to claim 13 , wherein the ambient plasma generator further comprises:
positive and negative electrodes in the body and attached to or included in a wall of the channel, wherein the positive and negative electrodes are configured to generate a high-intensity electric field inside the channel to produce plasma in gas flow that passes through the channel.

20. The semiconductor manufacturing system according to claim 14 , wherein prior to directing the plasma wind stream to the surface of the reticle, the controller is configured to send a command to the wafer exchange device to retrieve the reticle from the reticle library and to transfer the reticle to the treatment device.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Chung-Hsuan
• Lin Chen-Yang
• Sung Ku-Hsiang
• Yu da-wei
• Lin Kuan-Wen
• Chen Chia-Jen
• Lee Hsin-Chang

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0616

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title