Photoresist layer outgassing prevention

Patent metadata

Field	Value
Publication number	US-12374548-B2
Application number	US-202418649086-A
Country	US
Kind code	B2
Filing date	Apr 29, 2024
Priority date	Jun 18, 2020
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

First claim

What is claimed is:

1. A method, comprising:
forming a resist layer over a substrate;
surface treating a main surface of the resist layer to form a dehydrated film over the resist layer,
wherein the surface treating of the main surface of the resist layer includes applying ozone to the main surface of the resist layer;
patternwise crosslinking the resist layer; and
removing a portion of the resist layer not crosslinked during the patternwise crosslinking to form a pattern in the resist layer.

2. The method according to claim 1 , further comprising heating the resist layer after the patternwise crosslinking and before the removing a portion of the resist layer not crosslinked.

3. The method according to claim 1 , wherein the resist layer is heated at a temperature ranging from 100° C. to 500° C. during the heating the resist layer after the patternwise crosslinking.

4. The method according to claim 1 , wherein the removing a portion of the resist layer comprises applying a developer to the patternwise crosslinked resist layer.

5. The method according to claim 1 , wherein the removing a portion of the resist layer comprises applying a plasma to the patternwise crosslinked resist layer.

6. The method of claim 1 , wherein a first portion of the surface-treated main surface of the resist layer overlying the portion of the resist layer not crosslinked during the patternwise crosslinking is removed during the removing of the resist layer not crosslinked during the patternwise crosslinking.

7. The method according to claim 1 , further comprising extending the pattern in the resist layer into the substrate by etching the substrate using the patternwise crosslinked resist layer and a second portion of the dehydrated film overlying the patternwise crosslinked resist layer as a mask.

8. The method according to claim 1 , wherein the dehydrated film has a thickness ranging from 0.1 nm to 5 nm.

9. The method according to claim 1 , wherein a ratio of a thickness of the dehydrated film to an original thickness of the resist layer as formed ranges from 1/100 to 1/10.

10. A method of manufacturing a semiconductor device, comprising:
depositing a reaction product of a vapor phase organometallic compound and a second vapor phase compound to form a resist layer over a layer to be patterned on a substrate,
wherein the organometallic compound has a formula:
M a R b X c

where M is at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, or Lu,
R is a substituted or unsubstituted alkyl, alkenyl, or carboxylate group,
X is a halide or sulfonate group, and
1≤a≤2, b≥1, c≥1, and b+c≤5, and
the second vapor phase compound is at least one of an amine, a borane, a phosphine, or water;

surface treating a main surface of the resist layer to convert the main surface of the resist layer to a dehydrated film;
patternwise crosslinking the resist layer to form a latent pattern in the resist layer;
developing the latent pattern by applying a developer to the patternwise crosslinked resist layer to form a photoresist pattern exposing a surface portion of the layer to be patterned; and
etching the layer to be patterned using the photoresist pattern and a first portion of the dehydrated film overlying the photoresist pattern as an etching mask.

11. The method according to claim 10 , wherein the dehydrated film has a thickness ranging from 0.1 nm to 5 nm.

12. The method according to claim 10 , wherein a second portion of the dehydrated film overlying a portion of the resist layer not crosslinked during the patternwise crosslinking is removed during the developing the latent pattern.

13. The method according to claim 10 , wherein the patternwise crosslinking the resist layer includes patternwise exposing the resist layer to extreme ultraviolet radiation through the dehydrated film.

14. The method according to claim 10 , wherein the patternwise crosslinking the resist layer includes heating the resist layer at a temperature ranging from 100° C. to 500° C. before the developing the latent pattern.

15. The method according to claim 10 , wherein a ratio of a thickness of the dehydrated film to an original thickness of the resist layer as formed ranges from 1/100 to 1/10.

16. A method of manufacturing a semiconductor device, comprising:
depositing a photoresist layer over a substrate by a vapor phase deposition operation;
wherein the photoresist layer comprises a reaction product of an organometallic compound and a second compound, wherein the second compound is at least one of an amine, a borane, a phosphine, or water;
surface treating a main surface of the photoresist layer to convert the main surface to a dehydrated film,
selectively exposing the photoresist layer to actinic radiation through the dehydrated film to form a latent pattern in the photoresist layer; and
removing portions of the photoresist layer not exposed to the actinic radiation to form a pattern of remaining portions of the photoresist layer that were exposed to the actinic radiation during the selectively exposing the photoresist layer.

17. The method according to claim 16 , wherein the removing the portions of the photoresist layer includes applying a plasma to the photoresist layer.

18. The method according to claim 16 , wherein the vapor phase deposition operation includes atomic layer deposition or chemical vapor deposition.

19. The method according to claim 16 , wherein the surface treating comprises applying ozone to the main surface of the photoresist layer.

20. The method according to claim 16 , wherein the surface treating comprises applying an organic solvent vapor to the main surface of the photoresist layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Yen-Yu
• Liu Chih-Cheng
• Kuo Yi-Chen
• Li Jr-Hung
• Lee Tze-Liang
• Weng Ming-Hui
• Cheng Yahru

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• G03F7/167

  from the gas phase, by plasma deposition (G03F7/2035 takes precedence) · CPC title

• G03F7/168

  Finishing the coated layer, e.g. drying, baking, soaking · CPC title