Memory device having a negative voltage circuit

Patent metadata

Field	Value
Publication number	US-12367929-B2
Application number	US-202418601706-A
Country	US
Kind code	B2
Filing date	Mar 11, 2024
Priority date	Dec 30, 2019
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

A memory device and a method for operating the memory device are provided. The memory device includes a memory cell and a bit line connected to the memory cell. A negative voltage generator is connected to the bit line. The negative voltage generator, when enabled, is operative to provide a first write path for the bit line. A control circuit is connected to the negative voltage generator and the bit line. The control circuit is operative to provide a second write path for the bit line when the negative voltage generator is not enabled.

First claim

What is claimed is:

1. A memory device, comprising:
a negative voltage generator connected to a bit line;
a pull down transistor connected between the bit line and ground; and
a pull down circuit comprising a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the pull down circuit is operative to receive data signal to be written to a memory cell connected to the bit line, wherein the second input terminal of the pull down circuit is directly connected to the negative voltage generator and is operative to receive a write assist enable signal that is being provided to the negative voltage generator, wherein the output terminal of the pull down circuit is connected to a gate of the pull down transistor, and wherein the pull down circuit is operative to:
enable a first write path for the bit line through the negative voltage generator in response to the write assist enable signal attaining a first value, and
enable a second write path for the bit line through the pull down transistor in response to the write assist enable signal attaining a second value.

2. The memory device of claim 1 , wherein the pull down circuit comprises a NOR logic gate.

3. The memory device of claim 1 , wherein the pull down circuit comprises a AND logic gate.

4. The memory device of claim 1 , further comprising a write driver circuit connected to the bit line and a multiplexer connected to the bit line.

5. The memory device of claim 1 , wherein the negative voltage generator is operative to provide a negative voltage to the bit line.

6. The memory device of claim 1 , wherein the second write path comprises a lower resistance value than the first write path.

7. The memory device of claim 1 , wherein the second write path comprises three transistors and the first write path comprises two transistors.

8. A memory device, comprising:
a first write path connected to a bit line of a memory device, wherein the first write path comprises a negative voltage generator circuit;
a second write path connected to the bit line, the second write path comprising a pull down transistor connected between the bit line and ground; and
a pull down circuit comprising a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the pull down circuit is operative to receive data signal to be written to a memory cell connected to the bit line, wherein the second input terminal of the pull down circuit is directly connected to the negative voltage generator circuit and is operative to receive a write assist enable signal that is being provided to the negative voltage generator circuit, wherein the output terminal of the pull down circuit is connected to a gate of the pull down transistor, and wherein the pull down circuit is operative to:
enable a first write path for the bit line through the negative voltage generator in response to the write assist enable signal attaining a first value, and
enable the second write path in response to the write assist enable signal attaining a second value.

9. The memory device of claim 8 , wherein the pull down circuit comprises a NOR logic gate.

10. The memory device of claim 8 , wherein the pull down circuit comprises a AND logic gate.

11. The memory device of claim 8 , further comprising a write driver circuit connected to the bit line and a multiplexer connected to the bit line.

12. The memory device of claim 8 , wherein the negative voltage generator is operative to provide a negative voltage to the bit line.

13. The memory device of claim 8 , wherein the second write path comprises a lower resistance value than the first write path.

14. The memory device of claim 8 , wherein the second write path comprises three transistors and the first write path comprises two transistors.

15. A method comprising:
receiving a write enable signal indicating a write operation in a memory device comprising a bit line;
generating a write assist enable signal in response to the write enable signal;
enabling a first write path to the bit line in response to the write assist signal attaining a first value, wherein the first write path comprises a negative voltage generator; and
enabling a second write path to the bit line in response to the write assist signal attaining a second value, wherein enabling the second write path comprises enabling, by a control circuit, a pull down transistor connected between the between the bit line and ground in response to the write assist enable signal attaining a second value, wherein a first input terminal of the control circuit is operative to receive data signal, and wherein a second input terminal of the control circuit is directly connected to the negative voltage generator and is operative to receive the write assist enable signal that is being provided to the negative voltage generator.

16. The method of claim 15 , wherein the pull down circuit comprises a AND logic circuit.

17. The method of claim 15 , wherein the pull down circuit comprises a NOR logic circuit.

18. The method of claim 15 , wherein the first write path further comprises a multiplexer circuit transistor and a write driver circuit transistor.

19. The method of claim 15 , wherein the second write path further comprises a multiplexer circuit transistor and the pull down transistor.

20. The method of claim 15 , wherein the second write path comprises a lower resistance value than the first write path.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Nien Yi-Hsin
• Fujiwara Hidehiro
• Lin Chih-Yu
• Chen Yen-Huei

Classifications

• G11C7/12

  Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines · CPC title

• G11C7/1096

  Write circuits, e.g. I/O line write drivers · CPC title

• G11C5/147

  Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence) · CPC title

• G11C11/419 Primary

  Read-write [R-W] circuits · CPC title