Conformal Doped Amorphous Silicon As Nucleation Layer For Metal Deposition

Patent metadata

Field	Value
Publication number	US-2020335334-A1
Application number	US-201816754619-A
Country	US
Kind code	A1
Filing date	Oct 9, 2018
Priority date	Oct 9, 2017
Publication date	Oct 22, 2020
Grant date	—

Abstract

Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.

First claim

1 . A processing method comprising:
exposing a substrate surface to a silicon precursor and a dopant to form a doped amorphous silicon layer having a thickness; and forming a metal layer on the doped amorphous silicon layer.

2 . The method of claim 1 , wherein the substrate surface is exposed to the silicon precursor and the dopant simultaneously.

3 . The method of claim 1 , wherein the silicon precursor comprises a silane or a halosilane.

4 . The method of claim 3 , wherein the silane comprises one or more of silane, disilane, trisilane, tetrasilane, isotetrasilane, neopentasilane, cyclopentasilane, hexasilane or cyclohexasilane.

5 . The method of claim 3 , wherein the halosilane comprises one or more of dihalosilane, trihalosilane, tetrahalosilane, or hexahalodisilane.

6 . The method of claim 1 , wherein the doped amorphous silicon layer comprise one or more of boron, phosphorous, arsenic or germanium.

7 . The method of claim 6 , wherein the dopant comprises one or more of borane, diborane, phosphine, germane or digermane.

8 . The method of claim 1 , wherein the substrate surface is exposed at a temperature less than or equal to about 100° C.

9 . The method of claim 1 , wherein the metal layer is deposited by atomic layer deposition.

10 . The method of claim 1 , wherein the metal layer is formed by exposing the doped amorphous silicon layer to a metal precursor and a reactant, the metal precursor comprising one or more of WF 6 and MoF 6 and the reactant comprising hydrogen.

11 . The method of claim 1 , further comprising depositing a glue layer on the substrate surface before forming the doped amorphous silicon layer.

12 . A processing method comprising:
providing a silicon substrate having a silicon oxide surface; forming a glue layer on the silicon substrate, the glue layer comprising TiN with a thickness in the range of about 1 Å to about 30 Å; forming a doped amorphous silicon layer on the glue layer by exposing the glue layer to a silicon precursor comprising disilane and a dopant comprising diborane, the substrate maintained at a temperature less than or equal to about 100° C.; and forming a metal layer on the doped amorphous silicon layer.

13 . The method of claim 12 , wherein the metal layer is formed by atomic layer deposition.

14 . The method of claim 13 , wherein the metal layer comprises one or more of tungsten and molybdenum.

15 . The method of claim 14 , wherein the metal layer is deposited by exposing the doped amorphous silicon layer to a metal precursor and a reactant, the metal precursor comprising one or more of WF 6 and MoF 6 and the reactant comprising hydrogen.

16 . The method of claim 5 , wherein the halogen consists of chlorine.

17 . The method of claim 1 , wherein the thickness is in the range of about 20 Å to about 100 Å.

18 . The method of claim 1 , wherein the metal layer comprises one or more of tungsten and molybdenum.

19 . The method of claim 11 , wherein the glue layer comprising TiN

20 . A stack comprising:
a substrate having an oxide surface; a glue layer on the oxide surface, the glue layer comprising TiN; a doped amorphous silicon layer on the glue layer, the doped amorphous silicon layer comprising one or more of boron, phosphorous, arsenic or germanium; and a metal layer on the doped amorphous silicon layer, the metal layer comprising one or more of tungsten or molybdenum.

Assignees

• Applied Materials Inc

Inventors

• Cheng Rui
• Chen Yihong
• Wu Yong
• Mallick Abhijit Basu
• Gandikota Srinivas

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title