Composition for etching and manufacturing method of semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-12012525-B2
Application number	US-202017090904-A
Country	US
Kind code	B2
Filing date	Nov 6, 2020
Priority date	Dec 26, 2016
Publication date	Jun 18, 2024
Grant date	Jun 18, 2024

Abstract

The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

First claim

The invention claimed is:

1. A semiconductor element comprising: a cell gate structure formed on a substrate on which a plurality of interlayer insulating layers and a plurality of gate electrode layers are alternatively stacked, wherein the cell gate structure formed by selectively etching a plurality of nitride layers by a composition for the selective etching, wherein the composition for etching comprises: a first inorganic acid, a first additive represented by Chemical Formula 1, a second additive comprising a silane inorganic acid salt produced by reaction between a second inorganic acid and a silane compound; and a solvent, wherein: the second inorganic acid is at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, and a combination thereof; and the silane compound is a compound selected from Chemical Formulas 10, 20, and their combination, the silane inorganic acid salt is represented by Chemical Formula C230-1;

wherein (Chemical Formula 1, X is O or N, R1 to R6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group, and n11 is 0 or 1;

wherein Chemical Formula 10 and Chemical Formula 20, each R1 to R10 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least one of R1 to R4 is hydrogen, or an alkoxy group having 1 to 10 carbon atoms, and n is one of integer numbers from 1 to 10;

wherein Chemical Formula C230-1, each R111 to R112 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, each R113 to R114 is independently hydrogen, n4 is one of integer numbers from 0 to 2, Il is one of integer numbers from 0 to 10, ml is O or 1.

2. The semiconductor element of claim 1 , wherein any one of hydrogen of R113 to R114 in the Chemical Formula C230-1 is substituted by Chemical Formula C250-1;

wherein Chemical Formula C250-1, any one of R131 to R132 is a coupler coupling to Chemical Formula C230-1, the other is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, and each R113 to R115 is independently hydrogen, or substituted by a substituent represented by Chemical Formula C250-1, n4 is one of integer numbers from 0 to 2, Il is one of integer numbers from O to 10, ml is 0 or 1.

3. The semiconductor element of claim 1 , wherein the silane inorganic acid salt represented by Chemical Formula C230-1 is any one selected from a group consisting of Chemical Formulas 62, 63, 67, 234 and their combination;

wherein Chemical Formulas 62, 63, 67, and 234, each R1-1, R1-2, R1-3, R1-4, R11, and R13 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms.

4. The semiconductor element of claim 1 , wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 15% by weight, and the solvent as the balance.

Assignees

• Soulbrain Co Ltd

Inventors

• Park Jae-Wan
• Lim Jung-Hun
• Lee Jin-Uk

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title