Composition for etching and method for manufacturing semiconductor device using same

Patent metadata

Field	Value
Publication number	US-11149200-B2
Application number	US-201615781471-A
Country	US
Kind code	B2
Filing date	Oct 28, 2016
Priority date	Dec 4, 2015
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

First claim

The invention claimed is:

1. A composition for etching comprising:
a first inorganic acid;
a first additive, being any one selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and
a solvent,
wherein the composition for etching further comprises a second additive including any one selected from the group consisting of a silane inorganic acid salt, an alkoxysilane compound, a siloxane compound, an oxime compound, an oxime silane compound, and mixtures thereof,
wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, and the solvent as the balance.

2. The composition for etching according to claim 1 , wherein the first inorganic acid is any one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, hydrochloric acid, perchloric acid, and mixtures thereof.

3. The composition for etching according to claim 1 , wherein the organic phosphite is any one alkyl phosphite selected from the group consisting of dimethyl phosphite, diethyl phosphite, dipropyl phosphite, diisopropyl phosphite, dibutyl phosphite, trimethyl phosphite, triethyl phosphite, tripropyl phosphite, triisopropyl phosphite, tributyl phosphite, diphenyl phosphite, dibenzyl phosphite, and mixtures thereof.

4. The composition for etching according to claim 1 , wherein the hypophosphite is any one selected from the group consisting of ammonium hypophosphite, sodium hypophosphite, potassium hypophosphite, and mixtures thereof.

5. The composition for etching according to claim 1 , wherein the alkoxysilane compound includes a compound represented by the following Chemical Formula 300:

wherein in Chemical Formula 300, R 1 to R 4 each independently represent any one selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; and
at least any one of R 1 to R 4 represents an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, or an aminoalkoxy group having 1 to 10 carbon atoms.

6. The composition for etching according to claim 1 , wherein the siloxane compound includes a compound represented by the following Chemical Formula 350:

wherein in Chemical Formula 350, R 2 to R 5 each independently represent any one selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms;
at least any one of R 2 to R 5 represents an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, or an aminoalkoxy group having 1 to 10 carbon atoms; and
n represents an integer from 1 to 4.

7. The composition for etching according to claim 1 , wherein the oxime compound includes a compound represented by the following Chemical Formula 400:

wherein in Chemical Formula 400, R 1 and R 2 each independently represent any one selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aminoalkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkylcarbonyl group having 1 to 20 carbon atoms, an alkylcarbonyloxy group having 1 to 20 carbon atoms, and a cyanoalkyl group having 1 to 10 carbon atoms.

8. The composition for etching according to claim 1 , wherein the oxime silane compound includes a compound represented by the following Chemical Formula 500:

wherein in Chemical Formula 500, R 1 to R 3 each independently represent any one selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an arylalkyl group having 7 to 20 carbon atoms, and an alkylcarbonyl group having 1 to 20 carbon atoms;
R 4 and R 5 each independently represent any one selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an arylalkyl group having 7 to 20 carbon atoms, and an alkylcarbonyl group having 1 to 20 carbon atoms, or R 4 and R 5 are bonded to each other as an alkylene group having 3 to 12 carbon atoms and form an alicyclic ring;
x, y, and z each independently represent an integer from 0 to 3, and x+y+z represents an integer from 0 to 3.

9. The composition for etching according to claim 1 , wherein the composition for etching includes the second additive at a proportion of 0.01% to 20% by weight with respect to the total amount of the composition for etching.

10. The composition for etching according to claim 1 , wherein the composition for etching further comprises an ammonium-based compound or a fluorine-based compound at a proportion of 0.01% to 20% by weight with respect to the total amount of the composition for etching.

11. The composition for etching according to claim 1 , wherein the silane inorganic acid salt is a silane inorganic acid salt produced by reacting any one second inorganic acid selected from the group consisting of sulfuric acid, fuming sulfuric acid, nitric acid, phosphoric acid, anhydrous phosphoric acid, pyrophosphoric acid, polyphosphoric acid, and mixtures thereof, with a silane compound represented by the following Chemical Formula 10:

wherein in Chemical Formula 10, R 1 to R 4 each independently represent any one selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; and at least any one of R 1 to R 4 represents a halogen atom or an alkoxy group having 1 to 10 carbon atoms.

12. The composition for etching according to claim 11 , wherein the silane inorganic acid salt includes a compound represented by the following Chemical Formula 100:

wherein in Chemical Formula 100, R 1 represents any one selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms;
n 1 represents an integer from 1 to 4;
m 1 represents an integer from 1 to 10; and
R 2 to R 4 each rep

Assignees

• Soulbrain Co Ltd

Inventors

• Lim Jung Hun
• Lee Jin Uk
• Park Jae Wan

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• C09K13/04

  containing an inorganic acid · CPC title

• C09K13/06 Primary

  with organic material · CPC title

• C09K13/08

  containing a fluorine compound · CPC title