Composition for etching

Patent metadata

Field	Value
Publication number	US-9868902-B2
Application number	US-201514797050-A
Country	US
Kind code	B2
Filing date	Jul 10, 2015
Priority date	Jul 17, 2014
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

First claim

What is claimed is:

1. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:
a first inorganic acid;
at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound; and
a solvent,
wherein:
the second inorganic acid is at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, and a combination thereof; and
the silane compound is a compound represented by a first formula:

where each one of R 1 to R 4 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, and at least one of R 1 to R 4 is one of halogen or (C 1 -C 10 ) alkyl, and
wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

2. The composition of claim 1 , wherein the first inorganic acid is at least one selected from the group consisting of a sulfuric acid, a nitric acid, a phosphoric acid, a silicic acid, a hydrofluoric acid, a boric acid, a hydrochloric acid, a perchloric acid, and a combination thereof.

3. The composition of claim 1 , wherein the composition further comprises about 0.01 to about 20 wt % of an ammonium based compound in respect to a total weight of the composition.

4. The composition of claim 1 , wherein the composition further comprises about 0.01 to about 1 wt % of a fluoride based compound in respect to a total weight of the composition.

5. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:
a first inorganic acid;
at least one of silane inorganic acid salts produced by reaction between a polyphosphoric acid and a silane compound, wherein the at least one of silane inorganic acid salts includes a compound represented by a first formula:

where i) R 1 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 1 to 4,iii) m 1 is one of integer numbers from 1 to 10, and iv) each one of R 2 to R 4 is hydrogen; and
a solvent, and
wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the polyphosphroic acid, and the solvent comprising the remaining balance of the wt % of the composition.

6. The composition of claim 5 , wherein in the at least one of silane inorganic acid salts represented by the first formula, one of hydrogens selected from the group consisting of R 2 to R 4 is substituted by a substituent represented by a second formula:

where i) one of R 5 is a coupler to the second formula, ii) the others of R 5 are selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 2 to R 4 is hydrogen or substituted by a substituent represented by the third formula, iv) n 2 is one of integer numbers from 0 to 3, and v) m 2 is one of integer numbers from 1 to 10.

7. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:
a first inorganic acid;
at least one of siloxane inorganic acid salts generated through reaction between a second inorganic add and a siloxane compound; and
a solvent,
wherein the second inorganic add is one selected from the group consisting of a sulfuric add, a fuming sulfuric add, and a combination thereof, and
wherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic add salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

8. The composition of claim 7 , wherein the at least one of siloxane inorganic acid salts includes compounds represented by a sixth formula:

where i) each one of R 21 and R 22 is independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 0 to 3, iii) n 2 is one of integer numbers from 0 to 2, iv) m 1 is one of integer numbers 0 and 1, v) a sum of n 1 , n 2 , and m 1 is equal or greater than 1 (n 1 +n 2 +m 1 ≧1), vi) l 1 is one of integer numbers from 1 to 10, and vii) each one of R 23 to R 25 is hydrogen.

9. The composition of claim 8 , wherein in the at least one of siloxane inorganic acid salts, at least one of hydrogens selected from the group consisting of R 23 to R 25 is substituted by a substituent expressed by a seventh formula:

where i) one of R 26 and R 27 is a coupler to the sixth formula, ii) the others are independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 23 to R 25 is hydrogen or is substituted by a substituent expressed by the seventh formula, iv) n 3 is one of integer numbers from 0 to 3, v) n 4 is one of integer numbers from 0 to 2, vi) m 1 is one of integer numbers from 0 to 1, and vii) l 1 is one of integer numbers from 1 to 10.

10. A etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:
a first inorganic acid;
at least one of siloxane inorganic acid salts produced through reaction induced between a second inorganic acid including a nitric acid and a siloxane compound; and
a solvent, and
wherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

11. The composition of claim 10 , wherein the at least one of siloxane inorganic acid salts includes compounds represented by an eighth formula:

where i) one of R 31 and R 32 is independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 0 to 3, iii) n 2 is one of integer numbers from 0 to 2, iv) m 1 is one of integer numbers 0 and 1, v) a sum of n 1 , n 2 , and m 1 is equal or greater than 1 (n 1 +n 2 +m 1 ≧1), vi) l 1 is one of integer numbers from 1 to 10, and vii) each one of R 33 to R 35 is hydrogen.

12. The composition of claim 11 , wherein in the at least one of siloxane inorganic acid salts, at least one of hydrogen selected from the group consisting of R 33 to R 35 is substituted by a substituent expressed by a ninth formula:

where one of R 36 and R 37 is a coupler to the eighth formula, ii) the others

Assignees

• Soulbrain Co Ltd

Inventors

• Lee Jin Uk
• Park Jae Wan
• Lim Jung Hun

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/3216

  Nitrides · CPC title

• C09K13/06 Primary

  with organic material · CPC title

• H10D30/0411

  of FETs having floating gates · CPC title