MTJ device performance by controlling device shape

Patent metadata

Field	Value
Publication number	US-11963457-B2
Application number	US-202218064808-A
Country	US
Kind code	B2
Filing date	Dec 12, 2022
Priority date	Nov 13, 2017
Publication date	Apr 16, 2024
Grant date	Apr 16, 2024

Abstract

A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

First claim

What is claimed is:

1. A method comprising:
forming an electrode layer having a convex top surface on a substrate, wherein the convex top surface extends from a first interface with the substrate to an opposing second interface with the substrate when viewed in cross-section after the forming of the electrode layer having the convex top surface on the substrate;
forming a stack of magnetic tunneling junction (MTJ) layers on the electrode layer, wherein the stack of MTJ layers includes a first layer and a second layer, wherein the first layer and the second layer in the stack of MTJ layers acquire a respective curved top surface from the forming of the stack of MTJ layers, wherein defects associated with forming the first layer and the second layer in the stack of MTJ layers migrate to outer portions of the first layer and the second layer during the forming of the stack of MTJ layers, wherein the curved top surface of the first layer in the stack of MTJ layers spans a first distance over the substrate and the curved top surface of the second layer in the stack of MTJ layers spans a second distance after the forming of the stack of MTJ layers, wherein the first and second distances are measured along a first direction that is substantially parallel to a top surface of the substrate, wherein the first distance is different than the second distance and wherein the outer portion of the second layer has a flat top surface that is substantially parallel to the top surface of the substrate after the forming of the stack of the MTJ layers; and
removing the outer portions of the first and second layers that contain defects and a portion of the convex top surface of the electrode layer to thereby expose a portion of the substrate, wherein the convex top surface of the electrode layer no longer interfaces with the substrate at the first and second interfaces after the removing of the portion of the convex top surface of the electrode layer.

2. The method of claim 1 , wherein the second distance is greater than the first distance.

3. The method of claim 1 , wherein the first layer is a pinned layer and the second layer is a tunnel barrier layer.

4. The method of claim 1 , wherein the first layer is a tunnel barrier layer and the second layer is a free layer.

5. The method of claim 1 ,
wherein the forming of the stack of MTJ layers on the substrate includes forming the stack of MTJ layer directly on the convex top surface of the electrode layer.

6. The method of claim 1 , wherein a remaining portion of the first layer of the stack of MTJ layers is relatively free of defects after the removing of the outer portion of the first layer of the stack of MTJ layers.

7. The method of claim 1 , wherein the forming of the stack of MTJ layers on the electrode layer includes forming the first layer of the stack of MTJ layers directly on both the electrode layer and a top surface of the substrate.

8. A method comprising:
forming an electrode layer having a convex top surface on a substrate, wherein the convex top surface extends from a first interface with the substrate to an opposing second interface with the substrate when viewed in cross-section after the forming of the electrode layer having the convex top surface on the substrate;
forming a first layer of a stack of MTJ layers on the convex top surface of the electrode layer thereby inducing strain in the first layer of the stack of MTJ layers to cause defects in the first layer to migrate from a second portion of the first layer to a first portion of the first layer, wherein the first portion of the first layer has a first top surface that is substantially parallel to the top surface of the substrate; and
removing the first portion of the first layer and a portion of the convex top surface of the electrode layer after the forming of the first layer of the stack of MTJ layers on the convex top surface, wherein the convex top surface of the electrode layer no longer interfaces with the substrate at the first and second interfaces after the removing of the portion of the convex top surface of the electrode layer.

9. The method of claim 8 , wherein the second portion of the first layer has a second top surface having a curved shape, and
wherein the second portion of the first layer of the stack of MTJ layers is relatively free of defects after the removing of the first portion of the first layer of the stack of MTJ layers.

10. The method of claim 9 , wherein the defects are selected from the group consisting of vacancies, pinholes and dislocations.

11. The method of claim 8 , wherein the first layer includes a plurality of layers, wherein each layer in the plurality of layers is formed of a different material.

12. The method of claim 8 , wherein the stack of MTJ layers includes a second layer formed of a different material than the first layer, and
wherein inducing strain in the first layer of the stack of MTJ layers includes inducing strain the second layer to cause defects in the second layer to migrate from a fourth portion of the second layer to a third portion of the second layer.

13. The method of claim 8 , wherein the removing of the first portion of the first layer includes removing the third portion of the second layer after the inducing of the strain in the first and second layers of the stack of MTJ layers.

14. The method of claim 8 , wherein a portion of the substrate is covered by the electrode layer having the convex top surface after the forming of the electrode layer having the convex top surface on the substrate, and
wherein the removing of the first portion of the first layer and the portion of the convex top surface of the electrode layer causes the portion of the substrate to be exposed after the removing of the portion of the convex top surface of the electrode layer.

15. A method comprising:
forming a conductive layer on a top surface of a substrate;
modifying the conductive layer to have a concave top surface;
forming a stack of magnetic tunneling junction (MTJ) layers on the concave top surface of the conductive layer, wherein the stack of MTJ layers includes a first layer and a second layer disposed over the first layer, wherein the first layer and the second layer in the stack of MTJ layers have respective concave top surfaces, wherein defects associated with forming the first layer migrate to a first portion of the first layer during the forming of the stack of MTJ layers, wherein the concave top surface of the first layer in the stack of MTJ layers spans a first distance over the substrate and the concave top surface of the second layer in the stack of MTJ layers spans a second distance after the forming of the stack of MTJ layers, wherein the first and second distances are measured along a first direction that is substantially parallel to the top surface of the substrate, wherein the first distance is different than the second distance, wherein the first portion of the first layer has a flat top surface that is substantially parallel to the top surface of the substrate after the forming of the stack of the MTJ layers, wherein the first portion of the first layer physically contacts the top surface of the substrate after the forming of the stack of MTJ layers; and
removing the first portion of the first layer that contains defects and a portion of the concave top surface of the conductive layer to thereby expose the top surface of the substrate.

16. The method of claim 15 , wherein the modifying of the conductive layer to have the concave top surface includes performing a sputter etching process.

17. The method of clai

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Haq Jesmin
• Zhong Tom
• Teng Zhongjian
• Lam Vinh
• Yang Yi

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H01F10/06

  characterised by the coupling or physical contact with connecting or interacting conductors · CPC title

• H01F10/16

  containing cobalt ({H01F10/126} , H01F10/13 take precedence) · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title