MTJ device performance by controlling device shape

Patent metadata

Field	Value
Publication number	US-11527711-B2
Application number	US-202117195317-A
Country	US
Kind code	B2
Filing date	Mar 8, 2021
Priority date	Nov 13, 2017
Publication date	Dec 13, 2022
Grant date	Dec 13, 2022

Abstract

A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

First claim

What is claimed is:

1. A method comprising:
forming an electrode layer having a curved top surface on a top surface of a substrate;
forming a stack of magnetic tunneling junction (MTJ) layers on the curved top surface of the electrode layer, wherein each layer in the stack of MTJ layers acquires a respective curved top surface from the forming of the stack of MTJ layers on the curved top surface of the electrode layer, and wherein defects associated with crystalline growth for each layer of the stack of MTJ layers migrate to outer portions of each layer during the forming of each layer of the stack of MTJ layers, wherein each respective curved top surface for each layer in the stack of MTJ layers spans a different distance over the substrate after the forming of the stack of MTJ layers on the curved top surface of the electrode layer, wherein the distance for each respective curved top surface is measured along a first direction that is substantially parallel to the top surface of the substrate; and
removing the outer portions of each layer that contain defects associated with crystalline growth for each layer such that a remaining portion of each layer of the stack of MTJ layers is relatively free of defects associated with crystalline growth.

2. The method of claim 1 , wherein the defects are selected from the group consisting of vacancies, pinholes and dislocations.

3. The method of claim 1 , wherein the curved top surface of the electrode layer has a convex shaped cross-sectional profile.

4. The method of claim 1 , wherein the curved top surface of the electrode layer has a concave shaped cross-sectional profile.

5. The method of claim 1 , wherein the stack of MTJ layers includes a pinned layer, a tunneling junction layer and a free layer.

6. The method of claim 1 , wherein the remaining portions of each layer of the stack of MTJ layers has the same width.

7. The method of claim 1 , wherein the forming of the electrode layer having the curved top surface includes forming the electrode layer on a substrate, and
wherein a portion of the substrate is exposed by the removing of the outer portions of each layer that contain defects.

8. A method comprising:
forming a conductive layer having an axially symmetric curved top surface on a top surface of a substrate; and
forming a stack of magnetic tunneling junction (MTJ) layers on the curved top surface of the conductive layer, wherein the forming of the stack of the MTJ layers includes inducing strain in at least one layer of the stack of MTJ layers to cause defects in the at least one layer to migrate to an outer portion of the at least one layer, wherein the at least one layer includes a middle portion having a curved top surface and the outer portion has a flat top surface that is substantially parallel to the top surface of the substrate after the forming of the stack of the MTJ layers.

9. The method of claim 8 , further comprising removing the outer portion of the at least one layer after inducing strain in the at least one layer of the stack of MTJ layers.

10. The method of claim 9 , wherein a remaining portion of each layer from the stack of MTJ layers remains disposed over the substrate after the removing of the outer portion of the at least one layer, and
wherein the remaining portion of each layer is relatively free of defects.

11. The method of claim 8 , wherein the inducing of strain in the at least one layer of the stack of MTJ layers includes inducing strain in each layer of the stack of MTJ layers to cause defects in each layer to migrate to a respective outer portion of each layer.

12. The method of claim 8 , wherein the substrate includes a flat top surface, and
wherein the forming of the conductive layer having the axially symmetric curved top surface on the substrate includes forming the conductive layer directly on the flat top surface of the substrate.

13. The method of claim 8 , wherein the axially symmetric curved top surface has a convex shaped cross-sectional profile.

14. The method of claim 8 , wherein the axially symmetric curved top surface has a concave shaped cross-sectional profile.

15. The method of claim 8 , wherein the stack of MTJ layers includes:
a seed layer formed of a material selected from the group consisting of Ta, Ru, W and NiCr,
a free layer formed of CoFeB;
a pinned layer formed of CoFeB;
a tunneling barrier layer that includes an oxide material; and
a capping layer formed of a material selected from the group consisting of Ta, W and Mg.

16. The method of claim 8 , wherein the defects are selected from the group consisting of vacancies, pinholes and dislocations.

17. The method of claim 8 , wherein the conductive layer includes an electrode layer.

18. A method comprising:
forming a stack of magnetic tunneling junction (MTJ) layers over a top surface of a substrate, wherein the forming of the stack of the MTJ layers includes inducing strain in at least one layer of the stack of MTJ layers to cause defects in the at least one layer to migrate to an outer portion of the at least one layer, wherein the at least one layer includes a middle portion having a curved top surface and the outer portion has a flat top surface that is substantially parallel to the top surface of the substrate after the forming of the stack of the MTJ layers; and
removing the outer portion of the at least one layer after inducing strain in the at least one layer of the stack of MTJ layers.

19. The method of claim 18 , further comprising forming a bottom electrode over the substrate having a curved top surface, and
wherein the forming of the stack of MTJ layers over the substrate includes forming the stack of MTJ layers on the curved top surface of the bottom electrode.

20. The method of claim 19 , wherein the at least one layer of the stack of MTJ layers is conformally formed on the curved top surface of the bottom electrode such that the at least one layer of the stack of MTJ layers acquires a respective curved top surface.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Haq Jesmin
• Zhong Tom
• Teng Zhongjian
• Lam Vinh
• Yang Yi

Classifications

• H01F10/16

  containing cobalt ({H01F10/126} , H01F10/13 take precedence) · CPC title

• H01F10/06

  characterised by the coupling or physical contact with connecting or interacting conductors · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic