Magnetoresistance effect element and magnetic memory
US-10164174-B2 · Dec 25, 2018 · US
containing cobalt ({H01F10/126} , H01F10/13 take precedence)
containing cobalt ({H01F10/126} , H01F10/13 take precedence) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01F10/16 |
| Official title | containing cobalt ({H01F10/126} , H01F10/13 take precedence) |
| Display label | containing cobalt ({H01F10/126} , H01F10/13 take precedence) |
| Total patents | 186 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 9 |
| 2016 | 14 |
| 2017 | 24 |
| 2018 | 27 |
| 2019 | 28 |
| 2020 | 26 |
| 2021 | 17 |
| 2022 | 5 |
| 2023 | 13 |
| 2024 | 9 |
| 2025 | 12 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Strontium oxide as a tunnel barrier for spin injection and giant spin accumulation
US-10134979-B1 · Nov 20, 2018 · US
Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer
US-10090456-B2 · Oct 2, 2018 · US
Magnetoelectric Computational Devices
US-2018248554-A1 · Aug 30, 2018 · US
Magnetoelectric Computational Devices
US-2018248553-A1 · Aug 30, 2018 · US
Integrated circuits with magnetic tunnel junctions and methods for producing the same
US-10032980-B2 · Jul 24, 2018 · US
Templating Layers For Perpendicularly Magnetized Heusler Films
US-2018205008-A1 · Jul 19, 2018 · US
Display panel and display device
US-2018186119-A1 · Jul 5, 2018 · US
Magnetoresistance effect element and magnetic memory
US-2018175286-A1 · Jun 21, 2018 · US
Magnetoresistance effect element
US-2018108834-A1 · Apr 19, 2018 · US
Patterning magnetic films using self-stop electro-etching
US-2018102207-A1 · Apr 12, 2018 · US
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
US-9882123-B2 · Jan 30, 2018 · US
Stress control in magnetic inductor stacks
US-2018005741-A1 · Jan 4, 2018 · US
Integrated circuits with magnetic tunnel junctions and methods for producing the same
US-2017345999-A1 · Nov 30, 2017 · US
Systems and methods for locally reducing oxides
US-9818535-B2 · Nov 14, 2017 · US
Magnetic random access memory with perpendicular enhancement layer
US-2017324027-A1 · Nov 9, 2017 · US
Method for Forming Perpendicular Magnetization Type Magnetic Tunnel Junction Element and Apparatus for Producing Perpendicular Magnetization Type Magnetic Tunnel Junction Element
US-2017317273-A1 · Nov 2, 2017 · US
Electrolessly formed high resistivity magnetic materials
US-2017314136-A1 · Nov 2, 2017 · US
Electrolessly formed high resistivity magnetic materials
US-2017316855-A1 · Nov 2, 2017 · US
Integrated circuits with magnetic tunnel junctions and methods for producing the same
US-2017309813-A1 · Oct 26, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01F10/16?
- CPC H01F10/16 is the Cooperative Patent Classification code for “containing cobalt ({H01F10/126} , H01F10/13 take precedence).”
- How many patents are filed under CPC H01F10/16 (containing cobalt ({H01F10/126} , H01F10/13 take precedence))?
- Our database includes 186 publications tagged with this CPC code.
- Is patent activity under CPC H01F10/16 growing?
- Publication counts under this code: 9 in 2024 vs 12 in 2025 (latest complete years).