Composition for etching
US-10465112-B2 · Nov 5, 2019 · US
Composition for etching and manufacturing method of semiconductor device using the same
US11912902B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11912902-B2 |
| Application number | US-201816228780-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2018 |
| Priority date | Dec 26, 2016 |
| Publication date | Feb 27, 2024 |
| Grant date | Feb 27, 2024 |
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- Title
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Abstract
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The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
First claim
Opening claim text (preview).
What is claimed is: 1. A composition for etching, comprising, a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent, wherein the first inorganic acid is phosphoric acid, wherein the composition for etching selectively etches a nitride layer with respect to an oxide layer, wherein etch selectivity of the composition for etching is from 24.86 to 6512. (In Chemical Formula 1, X is N, R1 to R6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a Cl-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group). 2. The composition for etching of claim 1 , wherein the composition for etching includes 0.01 to 15 wt % of the first additive, 70 to 99 wt % of the first inorganic acid, and the remaining amount as solvent. 3. The composition for etching of claim 1 , wherein the composition for etching further comprises a second additive comprising a silane inorganic acid salt produced by reacting a second inorganic acid with a silane compound. 4. A method of manufacturing a semiconductor device, comprising an etching process performed using the composition for etching of claim 1 .
Assignees
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Classifications
the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title
by chemical means · CPC title
Nitrides · CPC title
formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title
using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title
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- What does patent US11912902B2 cover?
- The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adverse…
- Who is the assignee on this patent?
- Soulbrain Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C09G1/04. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 27 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).