Compositions and methods for the selective removal of silicon nitride
US-2016035580-A1 · Feb 4, 2016 · US
Composition for etching
US10465112B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10465112-B2 |
| Application number | US-201715844712-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2017 |
| Priority date | Jul 17, 2014 |
| Publication date | Nov 5, 2019 |
| Grant date | Nov 5, 2019 |
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- Title
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Abstract
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The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a semiconductor device, the method comprising an etching process that is carried out using an etching composition that selectively etches a nitride layer with respect to an oxide layer, wherein the etching composition includes: a first inorganic acid; at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound; and a solvent, wherein: the second inorganic acid is at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, and a combination thereof; and the silane compound is a compound represented by a first formula: where each one of R 1 to R 4 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, and at least one of R 1 to R 4 is one of halogen or (C 1 -C 10 ) alkyl, and wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.
Assignees
Inventors
Classifications
by chemical means · CPC title
the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title
Nitrides · CPC title
- C09K13/06Primary
with organic material · CPC title
Electricity · mapped topic
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- What does patent US10465112B2 cover?
- The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one sel…
- Who is the assignee on this patent?
- Soulbrain Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C09K13/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 05 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).