Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11908680-B2
Application number	US-202117644843-A
Country	US
Kind code	B2
Filing date	Dec 17, 2021
Priority date	Dec 18, 2020
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

First claim

We claim:

1. A substrate processing method, comprising:
partially etching a metal polycrystalline film at a peripheral portion of a substrate in a thickness direction of the metal polycrystalline film to etch an upper portion of the metal polycrystalline film by supplying an etching liquid to the peripheral portion while rotating the substrate having the metal polycrystalline film formed on a front surface thereof;
washing away an etching residue generated in the partially etching of the metal polycrystalline film with a rinse liquid by supplying the rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the partially etching of the metal polycrystalline film while rotating the substrate;
etching a remaining portion of the metal polycrystalline film as a lower portion of the metal polycrystalline film at the peripheral portion of the substrate in the thickness direction of the metal polycrystalline film by supplying the etching liquid to the peripheral portion while rotating the substrate;
washing away an etching residue generated in the etching of the remaining portion of the metal polycrystalline film with the rinse liquid by supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the etching of the remaining portion of the metal polycrystalline film while rotating the substrate; and
drying the substrate after the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film.

2. The substrate processing method of claim 1 ,
wherein the washing away of the etching residue generated in the partially etching of the metal polycrystalline film includes starting the supplying of the rinse liquid during the supplying of the etching liquid in the partially etching of the metal polycrystalline film.

3. The substrate processing method of claim 2 ,
wherein the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film includes starting the supplying of the rinse liquid during the supplying of the etching liquid in the etching of the remaining portion of the metal polycrystalline film.

4. A substrate processing method, comprising:
partially etching a metal polycrystalline film at a peripheral portion of a substrate in a thickness direction by supplying an etching liquid to the peripheral portion while rotating the substrate having the metal polycrystalline film formed on a front surface thereof;
washing away an etching residue generated in the partially etching of the metal polycrystalline film with a rinse liquid by supplying the rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the partially etching of the metal polycrystalline film while rotating the substrate;
etching a remaining portion of the metal polycrystalline film at the peripheral portion of the substrate by supplying the etching liquid to the peripheral portion while rotating the substrate;
washing away an etching residue generated in the etching of the remaining portion of the metal polycrystalline film with the rinse liquid by supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the etching of the remaining portion of the metal polycrystalline film while rotating the substrate; and
drying the substrate after the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film,
wherein the washing away of the etching residue generated in the partially etching of the metal polycrystalline film includes starting the supplying of the rinse liquid during the supplying of the etching liquid in the partially etching of the metal polycrystalline film,
wherein the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film includes starting the supplying of the rinse liquid during the supplying of the etching liquid in the etching of the remaining portion of the metal polycrystalline film,
wherein the washing away of the etching residue generated in the partially etching of the metal polycrystalline film or the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film includes, while discharging the rinse liquid from a nozzle, moving the nozzle from an outside of the substrate toward the center side of the substrate beyond an edge of the substrate and increasing a flow rate of the rinse liquid discharged from the nozzle after the nozzle crosses the edge of the substrate.

5. The substrate processing method of claim 4 ,
wherein when a discharge angle of the rinse liquid from the nozzle is defined as an angle of a flow line of the rinse liquid connecting a liquid landing point of the rinse liquid discharged from the nozzle on the substrate and a discharge opening of the nozzle with respect to a reference line connecting the liquid landing point and a center of the substrate when viewed from a top, and
the washing away of the etching residue generated in the partially etching of the metal polycrystalline film or the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film includes, while discharging the rinse liquid from the nozzle, moving the nozzle from the outside of the substrate toward the center side of the substrate beyond the edge of the substrate and increasing the discharge angle after the nozzle crosses the edge of the substrate.

6. The substrate processing method of claim 1 , further comprising:
heating the substrate in the partially etching of the metal polycrystalline film to the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film,
wherein the heating of the substrate includes heating the substrate such that a temperature of the substrate before and after the start of the supplying of the rinse liquid in the washing away of the etching residue generated in the etching of the remaining portion of the metal polycrystalline film becomes lower than the temperature of the substrate during the supplying of the etching liquid in the partially etching of the metal polycrystalline film and in the etching of the remaining portion of the metal polycrystalline film.

7. A substrate processing method, comprising:
partially etching a metal polycrystalline film at a peripheral portion of a substrate in a thickness direction by supplying an etching liquid to the peripheral portion while rotating the substrate having the metal polycrystalline film formed on a front surface thereof,
washing away an etching residue generated in the partially etching of the metal polycrystalline film with a rinse liquid by supplying the rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the partially etching of the metal polycrystalline film while rotating the substrate;
etching a remaining portion of the metal polycrystalline film at the peripheral portion of the substrate by supplying the etching liquid to the peripheral portion while rotating the substrate;
washing away an etching residue generated in the etching of the remaining portion of the metal polycrystalline film with the rinse liquid by supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the etching of the remaining portion of the metal polycrystalline

Assignees

• Tokyo Electron Ltd

Inventors

• Fujita Akira
• Goto Kyosei
• Aso Hiroki
• Saiki Daisuke

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0432

  mainly by conduction · CPC title