Method of forming polysilicon film and film forming apparatus

Patent metadata

Field	Value
Publication number	US-11062904-B2
Application number	US-201916685627-A
Country	US
Kind code	B2
Filing date	Nov 15, 2019
Priority date	Nov 16, 2018
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

There is provided a method of forming a polysilicon film, which includes: forming an amorphous silicon film on a substrate; forming a cap layer, which is formed of an amorphous germanium film or an amorphous silicon germanium film, on the amorphous silicon film; forming crystal nuclei of a silicon in the amorphous silicon film by heating the substrate at a first temperature; removing the cap layer after the crystal nuclei are formed; and growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

First claim

What is claimed is:

1. A method of forming a polysilicon film, the method comprising:
forming an amorphous silicon film on a substrate;
forming a cap layer, which is formed of an amorphous germanium film or an amorphous silicon germanium film, on the amorphous silicon film;
forming crystal nuclei of a silicon in the amorphous silicon film by heating the substrate at a first temperature;
removing the cap layer after the crystal nuclei are formed; and
growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

2. The method of claim 1 , wherein the forming the cap layer is performed continuously without exposing the substrate to an atmosphere after the forming the amorphous silicon film.

3. The method of claim 1 , wherein the second temperature is higher than the first temperature.

4. The method of claim 1 , wherein the first temperature falls within a range of 450 degrees C. to 550 degrees C.

5. The method of claim 1 , wherein the removing the cap layer includes etching the cap layer with a dilute hydrofluoric acid, and subsequently, etching the cap layer with a hydrogen peroxide solution.

6. The method of claim 1 , further comprising:
forming a seed layer on the substrate before the forming the amorphous silicon film.

7. A film forming apparatus comprising:
a processing container in which a substrate is accommodated;
a supply part configured to supply a silicon raw material gas, a germanium raw material gas, and an etching gas into the processing container;
an exhaust part configured to evacuate an interior of the processing container; and
a heating part configured to heat the substrate; and
a controller,
wherein the controller is configured to control the supply part, the exhaust part, and the heating part to perform steps including:
forming an amorphous silicon film on the substrate by supplying the silicon raw material gas into the processing container;
forming a cap layer by forming an amorphous germanium film on the amorphous silicon film by supplying the germanium raw material gas into the processing container, or by forming an amorphous germanium film on the amorphous silicon film by supplying the silicon raw material gas and the germanium raw material gas into the processing container;
forming crystal nuclei of a silicon in the amorphous silicon film by heating the amorphous silicon film at a first temperature;
removing the cap layer after the crystal nuclei are formed; and
growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

Assignees

• Tokyo Electron Ltd

Inventors

• Motoyama Yutaka
• Endo Atsushi

Classifications

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title