Target debris collection device and extreme ultraviolet light source apparatus including the same

Patent metadata

Field	Value
Publication number	US-11852984-B2
Application number	US-202318164835-A
Country	US
Kind code	B2
Filing date	Feb 6, 2023
Priority date	Aug 23, 2019
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A target debris collection device for extreme ultraviolet (EUV) light source apparatus, includes a baffle body extending within an EUV vessel between a collector and an outlet port of the EUV vessel to allow EUV light reflected from the collector to pass through an internal transmissive region thereof, a discharge plate provided in a first end portion of the baffle body adjacent to the collector to collect the target material debris on an inner surface of the baffle body, a guide structure to guide the target material debris collected in the discharge plate to a collection tank, and a first heating member provided in the guide structure to prevent the target material debris from being solidified.

First claim

What is claimed is:

1. A method of manufacturing semiconductor devices, comprising:
generating, using an extreme ultraviolet (EUV) light source apparatus, EUV light, the EUV light source apparatus including an EUV vessel, a target droplet generator, a laser generator, and a target debris collection device;
reflecting, using a mirror system, the EUV light to a photomask;
receiving, using the mirror system, reflected EUV light from the photomask; and
transferring, using the mirror system, the reflected EUV light from the photomask to a semiconductor wafer,
wherein the EUV vessel comprises,
a collector configured to reflect the EUV light;
a baffle assembly configured to allow the EUV light reflected from the collector to pass through an internal transmissive region of the baffle assembly, the baffle assembly including a baffle body between the collector and an outlet port of the EUV vessel and a discharge plate, the discharge plate provided in a first end portion of the baffle body adjacent to the collector, the discharge plate configured to collect target material debris within the baffle body;
a guide structure configured to guide the target material debris collected in the discharge plate to a collection tank;
a first heating member provided in the guide structure, the first heating member configured to heat the target material debris; and
a second heating member provided in a passage of the discharge plate, the second heating member configured to heat the target material debris.

2. The method of claim 1 , wherein
the mirror system includes an illumination mirror system; and
the method further comprises,
condensing, using the illumination mirror system, the generated EUV light, and
directing, using the illumination mirror system, the condensed EUV light to the photomask.

3. The method of claim 2 , wherein
the mirror system includes a projection mirror system; and
the method further comprises,
mounting the photomask on a lower surface of a mask stage; and
moving the mask stage such that a surface of the photomask including optical patterns of the photomask faces a direction of the projection mirror system and the semiconductor wafer.

4. The method of claim 3 , further comprising:
forming a photoresist pattern on a photoresist layer on a surface of the semiconductor wafer based on optical pattern information of the photomask, the forming including reflecting, using the photomask, the condensed EUV light through the project mirror system to project the optical pattern information onto the photoresist layer.

5. The method of claim 4 , further comprising:
exposing the photoresist layer on the surface of the semiconductor wafer; and
etching a layer of the semiconductor wafer below the photoresist layer to form a desired pattern on the semiconductor wafer.

6. The method of claim 5 , further comprising:
doping the semiconductor wafer based on the desired pattern.

7. The method of claim 5 , further comprising:
metallizing the semiconductor wafer based on the desired pattern.

8. The method of claim 1 , wherein the generating the EUV light further includes:
delivering, using the target droplet generator, target droplets in a direction towards the target debris collection device; and
directing, using the laser generator, laser light towards the target droplets being delivered, the laser light causing creation of plasma, the created plasma emitting the generated EUV light.

9. The method of claim 8 , wherein
the target droplet generator includes a nozzle and a target material catcher located opposite to the nozzle; and
the method further includes,
delivering, through the nozzle, the target droplets, and
collecting, using the target material catcher, unused targets droplets have been delivered.

10. The method of claim 8 , wherein
the collector includes a reflection surface and an aperture, the reflection surface having a primary focus within an irradiation site for the target droplets; and
the method further comprises,
directing, using the laser generator, the laser light through the aperture to the irradiation site to vaporize the target droplets being delivered.

11. The method of claim 10 , further comprising:
supplying a purge gas into the EUV vessel, the supplied purge gas transforming remnants of the target droplets deposited on interior surfaces of the EUV vessel and the collector into volatile target material compounds.

12. The method of claim 11 , further comprising:
collecting, using the target debris collection device, the volatile target material compounds.

13. A method of operating an extreme ultraviolet (EUV) light source apparatus, comprising:
reflecting, using a collector included in a vessel, EUV light;
allowing the EUV light reflected from the collector to pass through an internal transmissive region of a baffle body;
collecting, using a discharge plate adjacent to the collector, target material debris within the baffle body; and
guiding, using a guide structure, the target material debris collected in the discharge plate to a collection tank, the guiding including,
heating, using a first heating member provided in the discharge plate, the target material debris contacting the discharge plate, and
heating, using a second heating member provided in the guide structure, the target material debris contacting the guide structure.

14. The method of claim 13 , wherein the heating member comprises at least one heating line which extends from the baffle body to the collection tank, and the at least one heating line is included in the guide structure.

15. The method of claim 13 , wherein the guide structure has a length between 100 mm to 300 mm.

16. The method of claim 13 , wherein the guide structure extends along a direction of gravity.

17. The method of claim 13 , wherein the guide structure comprises a guide plate which extends from the baffle body to the collection tank.

18. The method of claim 13 , wherein the baffle body is between the collector and an outlet port of the vessel.

19. The method of claim 13 , wherein the discharge plate includes a discharge nozzle installed in a discharge hole formed in the discharge plate, and the discharge nozzle connects to the guide structure.

20. The method of claim 19 , further comprising:
heating, using a third heating member included in the discharge nozzle, the target material debris contacting the discharge nozzle.

Assignees

• Samsung Electronics Co Ltd

Inventors

• KIM SungHyup
• Yu Ho
• Kim Jeonggil
• Choi Minseok

Classifications

• H05G2/0025

  Systems for collecting the plasma generating material after the plasma generation · CPC title

• G03F7/70033 Primary

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G03F7/70916 Primary

  Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

• G03F7/70891

  Temperature · CPC title

• G21K1/06

  using diffraction, refraction or reflection, e.g. monochromators (G21K1/10, G21K7/00 take precedence) · CPC title