Extreme ultraviolet lithography system

Patent metadata

Field	Value
Publication number	US-2021033983-A1
Application number	US-202016805861-A
Country	US
Kind code	A1
Filing date	Mar 2, 2020
Priority date	Jul 30, 2019
Publication date	Feb 4, 2021
Grant date	—

Abstract

An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a collecting tank and a temperature adjusting pack. The collecting tank has a cover and the cover includes a plurality of through holes. Thicknesses of edges of the cover is greater than a thickness of a center of the cover. The temperature adjusting pack surrounds the collecting tank. The temperature adjusting pack includes a plurality of inlets aligned with the through holes.

First claim

What is claimed is:

1 . An extreme ultraviolet (EUV) lithography system, comprising:
a vane bucket module, comprising:
a collecting tank having a cover, the cover comprises a plurality of through holes, and thicknesses of edges of the cover is greater than a thickness of a center of the cover; and
a temperature adjusting pack surrounding the collecting tank, wherein the temperature adjusting pack comprises a plurality of inlets aligned with the through holes.

2 . The EUV lithography system of claim 1 , wherein a thickness of the cover decreases continuously from the edges of the cover to the center of the cover.

3 . The EUV lithography system of claim 1 , wherein a depth of each through hole is not uniform.

4 . The EUV lithography system of claim 1 , wherein a depth of each through hole decreases continuously towards the center of the cover.

5 . The EUV lithography system of claim 1 , wherein the thickness of the center of the cover is smaller than a minimum depth of each through hole.

6 . The EUV lithography system of claim 1 , further comprising:
a collector; a droplet generator and a droplet catcher disposed on two opposite sides of the collector along a first direction; a monitoring module, wherein the vane bucket module and the monitoring module are disposed on two opposite sides of the collector along a second direction perpendicular to the first direction.

7 . The EUV lithography system of claim 6 , further comprising:
a vane structure disposed over the collector, wherein the vane structure comprises a plurality of vertical gutters and a plurality of circumferential gutters connected with the vertical gutters; a plurality of drip pins protruding from the vane structure and communicated with one of the circumferential gutters, wherein the drip pins are aligned with the inlets of the temperature adjusting pack and the through holes of the cover; and a heating device disposed between the vane structure and the vane bucket module, wherein the heating device comprises a plurality of through openings aligned with the inlets of the temperature adjusting pack and the through holes of the cover, and the drip pins extend into the through openings.

8 . An extreme ultraviolet (EUV) lithography system, comprising:
a collector, configured to collect and reflect EUV light generated from plasma; and a droplet generator, a droplet catcher, and a vane bucket module each spaced apart from one another, wherein the droplet generator, the droplet catcher, and the vane bucket module surround a center of the collector, and the vane bucket module comprises:
a collecting tank having a cover, the cover comprises a plurality of through holes, and the cover has a concaved top surface; and
a temperature adjusting pack surrounding the collecting tank, wherein the temperature adjusting pack comprises a plurality of inlets aligned with the through holes.

9 . The EUV lithography system of claim 8 , wherein at least a portion of the top surface of the cover is inclined with respect to a bottom surface of the cover.

10 . The EUV lithography system of claim 9 , wherein an inclination angle of the at least a portion of the top surface of the cover ranges from 20° to 30°.

11 . The EUV lithography system of claim 8 , wherein the top surface of the cover is a curved surface.

12 . The EUV lithography system of claim 8 , wherein a level height of a center of the top surface of the cover is lower than level heights of edges of the top surface of the cover.

13 . The EUV lithography system of claim 8 , further comprising a monitoring module, wherein the droplet generator and the droplet catcher are disposed on two opposite sides of the collector along a first direction, and the vane bucket module and the monitoring module are disposed on two opposite sides of the collector along a second direction perpendicular to the first direction.

14 . The EUV lithography system of claim 8 , further comprising:
a vane structure disposed over the collector, wherein the vane structure comprises a plurality of vertical gutters and a plurality of circumferential gutters connected with the vertical gutters; a plurality of drip pins protruding from the vane structure and communicated with one of the circumferential gutters, wherein the drip pins are aligned with the inlets of the temperature adjusting pack and the through holes of the cover; and a heating device disposed between the vane structure and the vane bucket module, wherein the heating device comprises a plurality of through openings aligned with the inlets of the temperature adjusting pack and the through holes of the cover, and the drip pins extend into the through openings.

15 . An extreme ultraviolet (EUV) lithography system, comprising:
a collector, configured to collect and reflect EUV light generated from plasma; and a droplet generator, a droplet catcher, and a vane bucket module each spaced apart from one another, wherein the droplet generator, the droplet catcher, and the vane bucket module surround a center of the collector, and the vane bucket module comprises:
a collecting tank having a cover, the cover comprises a plurality of through holes, and a top portion of each through hole is larger than a bottom portion of each through hole; and
a temperature adjusting pack surrounding the collecting tank, wherein the temperature adjusting pack comprises a plurality of inlets aligned with the through holes.

16 . The EUV lithography system of claim 15 , wherein a portion of a sidewall of each through hole is perpendicular to a top surface and a bottom surface of the cover, and another portion of the sidewall of each through hole is inclined with respect to the top surface and the bottom surface of the cover.

17 . The EUV lithography system of claim 15 , wherein the plurality of through holes is two through holes, and the two through holes are arranged in mirror symmetry.

18 . The EUV lithography system of claim 15 , wherein the top portion of the through hole and the bottom portion of the through hole are eccentric.

19 . The EUV lithography system of claim 15 , further comprising a monitoring module, wherein the droplet generator and the droplet catcher are disposed on two opposite sides of the collector along a first direction, and the vane bucket module and the monitoring module are disposed on two opposite sides of the collector along a second direction perpendicular to the first direction.

20 . The EUV lithography system of claim 15 , further comprising:
a vane structure disposed over the collector, wherein the vane structure comprises a plurality of vertical gutters and a plurality of circumferential gutters connected with the vertical gutters; a plurality of drip pins protruding from the vane structure and communicated with one of the circumferential gutters, wherein the drip pins are aligned with the inlets of the temperature adjusting pack and the through holes of the cover; and a heating device disposed between the vane structure and the vane bucket module, wherein the heating device comprises a plurality of through openings aligned with the inlets of the temperature adjusting pack and the through holes of the cover, and the drip pins extend into the through openings.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Ssu-Yu
• Cheng Po-Chung
• Chen Li-Jui
• Hsu Che-Chang
• Yang Chi

Classifications

• H05G2/0025

  Systems for collecting the plasma generating material after the plasma generation · CPC title

• G03F7/70033 Primary

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G03F7/70883

  of optical system · CPC title

• G03F7/70916 Primary

  Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

• G03F7/70908

  Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus · CPC title