Euv light source and apparatus for lithography

Patent metadata

Field	Value
Publication number	US-2018376575-A1
Application number	US-201715801225-A
Country	US
Kind code	A1
Filing date	Nov 1, 2017
Priority date	Jun 27, 2017
Publication date	Dec 27, 2018
Grant date	—

Abstract

An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH 4 to Sn.

First claim

What is claimed is:

1 . A debris collection device for an extreme ultra violet (EUV) radiation source apparatus, comprising:
a first end support; a second end support; and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively, wherein a surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a hydride.

2 . The debris collection device of claim 1 , wherein the hydride is SnH 4 .

3 . The debris collection device of claim 2 , wherein the catalytic layer includes at least one selected from the group consisting of a ruthenium (Ru) layer, a tin (Sn) layer, a tin oxide layer and a titanium oxide layer.

4 . The debris collection device of claim 3 , wherein the catalytic layer includes a Ru layer.

5 . The debris collection device of claim 3 , wherein a thickness of the catalytic layer is in a range from 2 nm to 50 nm.

6 . The debris collection device of claim 2 , wherein:
the surface of the at least one of the plurality of vanes includes a roughened surface, and the catalytic layer is coated on the roughened surface.

7 . The debris collection device of claim 6 , wherein the roughened surface includes regularly formed structures.

8 . The debris collection device of claim 7 , wherein the regularly formed structures include at least one selected from the group consisting of a plurality of projections and a plurality of protrusions.

9 . The debris collection device of claim 7 , wherein a size of each of the regularly formed structures is in a range from 10 nm to 500 nm.

10 . The debris collection device of claim 6 , wherein the roughened surface includes irregularly formed structures.

11 . The debris collection device of claim 9 , wherein an arithmetic average surface roughness Ra of the roughened surface is in a range from 10 nm to 500 nm.

12 . An extreme ultra violet (EUV) radiation source apparatus, comprising:
a collector; a target droplet generator for generating a tin (Sn) droplet; a rotatable debris collection device; and a chamber enclosing at least the collector and the rotatable debris collection device, wherein: the rotatable debris collection device includes
a first end support;
a second end support; and
a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively,
a surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH 4 to Sn.

13 . The EUV radiation source apparatus of claim 12 , further comprising:
a gas inlet; and a gas outlet, wherein: a hydrogen gas is supplied from the gas inlet, and the debris collection device transfers a gas toward the outlet by a rotating operation.

14 . The EUV radiation source apparatus of claim 12 , wherein the catalytic layer includes a Ru layer.

15 . The EUV radiation source apparatus of claim 14 , wherein a thickness of the Ru layer is in a range from 2 nm to 50 nm.

16 . The EUV radiation source apparatus of claim 12 , wherein:
the surface of the at least one of the plurality of vanes includes a roughened surface, and the catalytic layer is coated on the roughened surface.

17 . The EUV radiation source apparatus of claim 16 , wherein:
the roughened surface includes regularly formed structures, and a size of each of the regularly formed structures is in a range from 10 nm to 500 nm.

18 . The debris collection device of claim 16 , wherein:
the roughened surface includes irregularly formed structures, and an arithmetic average surface roughness Ra of the roughened surface is in a range from 10 nm to 500 nm.

19 . The EUV radiation source apparatus of claim 12 , further comprising:
a laser light source for supplying laser light; and one or more optical components, wherein the Sn droplet generated by the target droplet generator is irradiated by the laser.

20 . A method for generating an extreme ultra violet (EUV) radiation, comprising:
irradiating a tin droplet with laser light in a hydrogen gas ambient, thereby creating the EUV radiation; and reducing SnH 4 by using a debris collection device to Sn, thereby collecting debris, wherein: the debris collection device includes a plurality of vanes, opposing ends of which are supported by a first end support and a second end support, respectively, and a surface of at least one of the plurality of vanes is coated with a Ru layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chien Shang-Chieh
• Cheng Po-Chung
• Chen Chia-Chen
• Chung Jen-Yang
• Chen Li-Jui
• Fu Tzung-Chi
• Wu Shang-Ying

Classifications

• G03F7/70916

  Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/70033

  by plasma extreme ultraviolet [EUV] sources · CPC title

• H10P72/04 Primary

  Apparatus for manufacture or treatment · CPC title

• H05G2/005 Primary

  Electricity · mapped topic