Substrate treatment apparatus and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-11784064-B2
Application number	US-202016950389-A
Country	US
Kind code	B2
Filing date	Nov 17, 2020
Priority date	Mar 17, 2017
Publication date	Oct 10, 2023
Grant date	Oct 10, 2023

Abstract

According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

First claim

The invention claimed is:

1. A substrate treatment method comprising:
preparing a substrate having a metal film on a pattern; and
removing the metal film with etching, by supplying a liquid chemical to the metal film in a state that a noble metal is directly in contact with the metal film, wherein
the noble metal is formed on a surface of a porous material, and the noble metal has a periodical concave-convex surface formed at a first pitch, and
a convex part of the periodical concave-convex surface is in contact with the metal film and a concave part of the periodical concave-convex surface is not in contact with the metal film.

2. The substrate treatment method according to claim 1 , wherein
a surface of the pattern is exposed by removing the metal film with etching.

3. The substrate treatment method according to claim 1 , wherein
the liquid chemical is alkaline.

4. The substrate treatment method according to claim 3 , wherein
the liquid chemical further contains an oxidizing agent.

5. The substrate treatment method according to claim 3 , wherein the liquid chemical includes choline, aqueous ammonia or sodium hydroxide.

6. The substrate treatment method according to claim 1 , wherein
the metal film includes tungsten.

7. The substrate treatment method according to claim 1 , wherein
the pattern includes a stacked body including conductor films including a same metal as that of the metal film and insulator films alternately stacked.

8. The substrate treatment method according to claim 1 , wherein
the metal film is etched by galvanic corrosion.

9. The substrate treatment method according to claim 1 , wherein
the noble metal includes at least any of platinum (Pt), gold (Au), silver (Ag) and palladium (Pd).

10. The substrate treatment method according to claim 1 , wherein the first pitch is larger than a height of the periodical concave-convex surface.

11. The substrate treatment method according to claim 1 , wherein a width of the porous material is smaller than a width of the substrate.

Assignees

• Kioxia Corp

Inventors

• Yoshimizu Yasuhito
• Akeboshi Yuya
• Ito Fuyuma
• Kitagawa Hakuba

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0412

  using mainly scrubbing means, e.g. brushes · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• H10P50/73

  using masks for insulating materials · CPC title