Polishing method, polishing apparatus and GaN wafer

Patent metadata

Field	Value
Publication number	US-9233449-B2
Application number	US-201013138635-A
Country	US
Kind code	B2
Filing date	Mar 19, 2010
Priority date	Mar 27, 2009
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate ( 16 ) into contact with a polishing tool ( 10 ) in the presence of a processing solution ( 14 ) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide ( 16 a ) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.

First claim

The invention claimed is:

1. A polishing method comprising:
preparing a Ga element-containing compound semiconductor substrate, whose surface has raised portions and recessed portions;
immersing the substrate in a processing solution comprising a buffer solution containing Ga ions, a concentration of the Ga ions being in a range of 10 ppm to 100 ppm, and the buffer solution having a pH in a range of 6 to 8;
irradiating the surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide on the surface of the substrate in the processing solution; and
rotating the substrate and a polishing tool with respect to each other to selectively polish and remove the Ga oxide formed on the raised portions of the surface of the substrate,
wherein the processing solution contains oxygen dissolved therein, and
wherein the processing solution does not comprise nitrogen dissolved from any Ga element-containing compound semiconductor substrate.

2. The polishing method according to claim 1 , wherein the polishing tool has an acidic or basic solid catalyst at least in a surface area which comes into contact with or close to the substrate.

3. The polishing method according to claim 1 , wherein the processing solution further comprises metal oxide particles, diamond particles, or catalyst particles whose surfaces are modified with an acidic or basic functional group, or a mixture of these particles.

4. The polishing method according to claim 1 , wherein the processing solution further comprises an oxidizing agent.

5. The polishing method according to claim 1 , wherein at least a surface area of the polishing tool, which comes into contact with or close to the substrate, has been conditioned to have desired flatness and appropriate roughness.

6. The polishing method according to claim 1 , further comprising:
preparing the processing solution prior to immersing the substrate in the processing solution.

Assignees

• Sano Yasuhisa
• Yamauchi Kazuto
• Murata Junji
• Sadakuni Shun
• Yagi Keita
• Univ Osaka
• Ebara Corp

Inventors

• Sano Yasuhisa
• Yamauchi Kazuto
• Murata Junji
• Sadakuni Shun
• Yagi Keita

Classifications

• B24B37/0056 Primary

  taking regard of the pH-value of lapping agents · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title