Planarization of spin-on films

Patent metadata

Field	Value
Publication number	US-11776808-B2
Application number	US-202017122898-A
Country	US
Kind code	B2
Filing date	Dec 15, 2020
Priority date	Mar 17, 2020
Publication date	Oct 3, 2023
Grant date	Oct 3, 2023

Abstract

A method for planarizing a substrate includes: receiving a substrate having microfabricated structures that differ in height across the working surface of the substrate that define a non-planar topography, depositing a first layer that includes a solubility-shifting agent on the working surface of the substrate by spin-on deposition in a non-planar fashion, exposing the first layer to a first pattern of actinic radiation based on the topography, developing the first layer using a predetermined solvent, and depositing a second layer over the working surface of the substrate that has a greater planarity as compared to the first layer prior to developing the first layer. The first pattern of radiation changes a solubility of the first layer such that upper regions of the non-planar topography of the first layer are soluble to the predetermined solvent.

First claim

What is claimed is:

1. A method of planarizing a substrate, the method comprising:
receiving a substrate having a non-planar working surface;
depositing a first layer on the non-planar working surface of the substrate by spin-on deposition, the first layer including a solubility-shifting agent, the first layer having a non-planar topography;
exposing the first layer to a first pattern of actinic radiation, the first pattern of actinic radiation based on the non-planar topography of the first layer, the first pattern of actinic radiation selectively changing a solubility of the first layer such that upper regions of the non-planar topography of the first layer are soluble to a predetermined solvent, and lower regions of the non-planar topography of the first layer are insoluble to the predetermined solvent;
developing the first layer using the predetermined solvent such that soluble portions of the first layer are removed, the developing resulting in a wet-processed top surface of the substrate; and
depositing a second layer on the wet-processed top surface of the substrate by spin-on deposition, wherein a top surface of the second layer has a greater planarity as compared to a top surface of the first layer prior to developing the first layer;
wherein the second layer includes the solubility-shifting agent;
exposing the second layer to the first pattern of actinic radiation, the first pattern of actinic radiation changing a solubility of the second layer such that upper regions of the second layer are soluble to a predetermined solvent, and lower regions of the second layer are insoluble to the predetermined solvent; and
developing the second layer using the predetermined solvent such that soluble portions of the first layer are removed.

2. The method of claim 1 , wherein the first pattern of actinic radiation is projected using a direct-write system.

3. The method of claim 1 , wherein the non-planar working surface of the substrate comprises microfabricated structures that have relative height differences greater than five microns.

4. A method of planarizing a substrate, the method comprising:
receiving a substrate having a non-planar surface in that the non-planar surface comprises first surfaces and second surfaces, the first surfaces having a greater z-height as compared to the second surfaces;
depositing a first layer on the non-planar surface of the substrate by spin-on deposition, the first layer including a solubility-shifting agent, depositing the first layer resulting in a non-planar film in that the first layer covers both the first surfaces and the second surfaces;
using a direct-write system, exposing the first layer to a first pattern of actinic radiation without a mask, the first pattern of actinic radiation being digitally programmed and based on coordinate locations of the first surfaces and the second surfaces, the first pattern of actinic radiation changing a solubility of the first layer such portions of the first layer that are on the first surfaces are soluble to a predetermined solvent, and portions of the first layer that are on the second surfaces are insoluble to the predetermined solvent;
developing the first layer using the predetermined solvent such that soluble portions of the first layer are removed, the developing resulting in a wet-processed top surface of the substrate; and
depositing a second layer on the wet-processed top surface of the substrate by spin-on deposition, wherein a top surface of the second layer has a greater uniformity as compared to a top surface of the first layer prior to developing the first layer;
exposing the second layer to the first pattern of actinic radiation, the first pattern of actinic radiation based on coordinate locations of the first surfaces and the second surfaces, the first pattern of actinic radiation changing a solubility of the second layer such that portions of the second layer that are on the first surfaces are soluble to the predetermined solvent, and portions of the second layer that are on the second surfaces are insoluble to the predetermined solvent; and
developing the second layer using the predetermined solvent such that soluble portions of the second layer are removed.

5. The method of claim 4 , wherein the first surfaces have a z-height greater than at least 5 microns compared to the second surfaces.

6. The method of claim 4 , wherein the first pattern of actinic radiation has a wavelength between 193 nm and 405 nm.

7. A method for forming a device, the method comprising:
receiving a substrate having a non-planar topography across a major surface of the substrate, the non-planar topography comprising a height difference between a first area of the substrate and a second area of the substrate, the first area having a greater height than the second area;
spin-coating a first intervening layer over the substrate;
exposing the substrate to a first localized pattern of radiation, wherein the first localized pattern of radiation is projected using direct write lithography;
developing the first intervening layer to reduce the height difference using a wet process, the developing resulting in a wet-processed top surface of the substrate;
measuring a topographic metric across the major surface of the substrate; and
comparing the topographic metric to a target topographic metric; and
in response to determining the topographic metric is different from a target topographic metric, spin-coating a second intervening layer on the wet-processed top surface of the substrate, exposing the substrate to the first localized pattern of radiation using direct write lithography, and developing the second intervening layer to further reduce the height difference.

8. The method of claim 7 further comprising
in response to determining the topographic metric meets the target topographic metric, forming a subsequent pattern of device features using a conventional lithography process.

9. The method of claim 7 , wherein the first intervening layer comprises a positive tone photoresist and the first localized pattern of radiation is formed over the first area.

10. The method of claim 7 , wherein the first intervening layer comprises a negative tone photoresist and the first localized pattern of radiation is formed over the second area.

11. The method of claim 7 , wherein the first localized pattern of radiation comprises of actinic radiation.

12. The method of claim 7 , wherein the first localized pattern of radiation has a wavelength between 193 nm and 405 nm.

13. The method of claim 7 , wherein the height difference between the first set of device features and the second set of device features is greater than five microns.

14. The method of claim 7 further comprising after forming the subsequent pattern of device features, measuring an updated topographic metric across the major surface of the substrate.

15. The method of claim 14 further comprising:
comparing the updated topographic metric to another target topographic metric; and
in response to determining the updated topographic metric meets the another target topographic metric, forming another subsequent pattern of device features.

16. The method of claim 14 further comprising:
comparing the updated topographic metric to another target topographic metric; and
in response to determining the updated topographic metric is different from the another target topographic metric, spin-coating another intervening layer over the substrate, exposing the substrate to the first localized pattern of radiation, and developing the another intervening layer.

Assignees

• Tokyo Electron Ltd

Inventors

• Schepis Anthony R
• Devilliers Anton

Classifications

• H10P14/6925

  the material comprising hydrogen silsesquioxane, e.g. HSQ · CPC title

• H10P14/6342 Primary

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title