Wafer heater with backside and integrated bevel purge

Patent metadata

Field	Value
Publication number	US-11769684-B2
Application number	US-202218080421-A
Country	US
Kind code	B2
Filing date	Dec 13, 2022
Priority date	Oct 12, 2019
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

First claim

What is claimed is:

1. A substrate support comprising:
a plurality of bonded plates forming a single component support body having an outer peripheral edge, a top surface and a bottom surface defining a body thickness;
a pocket formed in the top surface of the support body, the pocket having a bottom surface, a depth and an outer peripheral edge; and
a purge ring spaced a distance from the outer peripheral edge, the purge ring comprising at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

2. The substrate support of claim 1 , further comprising a hollow shaft connected to the bottom surface of the support body.

3. The substrate support of claim 2 , further comprising one or more electrodes within the body thickness at an electrode depth from the top surface configured to form an electrostatic chuck.

4. The substrate support of claim 2 , further comprising a primary heating element within the body thickness at a first depth below the top surface.

5. The substrate support of claim 4 , further comprising an inner zone heating element within the body thickness at a second depth different from the first depth, and an outer zone heating element within the body thickness at a third depth from the top surface different than the first depth.

6. The substrate support of claim 5 , further comprising a primary heating element power line, an inner zone heating element power line and an outer zone heating element power line routed through the hollow shaft to the top plate.

7. The substrate support of claim 1 , further comprising a plurality of mesas formed on the top surface within the purge ring.

8. The substrate support of claim 7 , wherein the mesas have a height in the range of about 10 μm to about 40 μm.

9. The substrate support of claim 1 , further comprising one or more temperature sensors within the body thickness.

10. A substrate support comprising:
a top plate having a top surface and a bottom surface, a purge ring formed in the top surface with a plurality of openings extending through the top plate to the bottom surface; and
a bottom plate having a top surface and a bottom surface, the bottom plate having a channel formed in the top surface aligned with the plurality of openings extending through the top plate to the purge ring, the top surface of the bottom plate bonded to the bottom surface of the top plate to form a single component support body, wherein the top plate comprises a first top plate having the purge ring extending through the first top plate and a second top plate having a plurality of openings extending through the second top plate, the plurality of openings aligned with the purge ring in the first top plate, the first top plate and second top plate bonded to form a single component top plate.

11. The substrate support of claim 10 , wherein the second top plate has at least one electrode formed in a top surface of the second top plate so that the at least one electrode is sandwiched between the first top plate and the second top plate.

12. The substrate support of claim 10 , wherein the bottom plate comprises a first bottom plate having the channel formed in the top surface, and a second bottom plate having a primary heating element formed in a top surface of the second bottom plate so that the primary heating element is sandwiched between the first bottom plate and the second bottom plate to form a single component bottom plate.

13. The substrate support of claim 12 , wherein the bottom plate further comprises a third bottom plate having an outer zone heating element formed in a top surface of the third bottom plate, the third bottom plate bonded to a bottom surface of the second bottom plate so that the outer zone heating element is sandwiched between the third bottom plate and the second bottom plate to form a single component bottom plate.

14. The substrate support of claim 13 , wherein the top plate and the bottom plate are bonded by elevated temperatures to fuse the plates.

15. A method of manufacturing a substrate support, the method comprising:
forming a top plate having a top surface and a bottom surface, a purge ring formed in the top surface with a plurality of openings extending through the top plate to the bottom surface;
forming a bottom plate having a top surface and a bottom surface, the bottom plate having a channel formed in the top surface spaced a distance from an outer peripheral edge of the bottom plate to align with the plurality of openings extending through the top plate to the purge ring; and
bonding the top surface of the bottom plate to the bottom surface of the top plate to form a single component support body, wherein forming the top plate comprises bonding a first top plate to a second top plate to form a single component, the first top plate having the purge ring extending through the first top plate and a second top plate having a plurality of openings extending through the second top plate, the plurality of openings aligned with the purge ring in the first top plate, the first top plate and second top plate.

16. The method of claim 15 , wherein the second top plate has at least one electrode formed in a top surface of the second top plate so that the at least one electrode is sandwiched between the first top plate and the second top plate.

17. The method of claim 16 , wherein forming the bottom plate comprises bonding a first bottom plate to a second bottom plate to form a single component, the first bottom plate having the channel formed in the top surface, and the second bottom plate having a primary heating element formed in a top surface of the second bottom plate so that the primary heating element is sandwiched between the first bottom plate and the second bottom plate.

18. The method of claim 17 , wherein forming the bottom plate further comprises bonding a third bottom plate to the second bottom plate to form a single component, the third bottom plate having an outer zone heating element formed in a top surface of the third bottom plate, the third bottom plate bonded to a bottom surface of the second bottom plate so that the outer zone heating element is sandwiched between the third bottom plate and the second bottom plate.

Assignees

• Applied Materials Inc

Inventors

• Ulavi Tejas
• Parkhe Vijay D
• Nagaraja Naveen Kumar
• Baluja Sanjeev
• Kumar Surajit
• Kashyap Dhritiman Subha
• Agarwal Ashutosh

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0432 Primary

  mainly by conduction · CPC title

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H10P72/7611 Primary

  characterised by edge profile or support profile · CPC title

• H10P72/72

  using electrostatic chucks · CPC title