Method and device for bonding of substrates

Patent metadata

Field	Value
Publication number	US-11742205-B2
Application number	US-202117377993-A
Country	US
Kind code	B2
Filing date	Jul 16, 2021
Priority date	Feb 16, 2016
Publication date	Aug 29, 2023
Grant date	Aug 29, 2023

Abstract

A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

First claim

What is claimed is:

1. A method for bonding a first substrate with a second substrate, said method comprising:
a) fixing of the first and second substrates to respective first and second holding devices, the first substrate fixed to a first holding surface of the first holding device and the second substrate fixed to a second holding surface of the second holding device;
b) arranging of the first and second substrates relative to each other;
c) mutual approaching of the first and second substrates toward each other;
d) contacting the first substrate with the second substrate at a bond initiation point;
e) generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates;
f) influencing the bonding wave during advancing of the bonding wave by deforming the first holding surface of the first holding device by use of mechanical actuators, and thereby deforming the first substrate fixed on the first holding surface.

2. The method according to claim 1 , wherein the deforming of the first holding surface includes shrinking and/or stretching of the first holding surface.

3. The method according to claim 1 , wherein said bonding is fusion bonding.

4. A device for the bonding of a first substrate with a second substrate, said device comprising:
a first holding device having a first holding surface for holding and fixing the first substrate;
a second holding device having a second holding surface for holding and fixing the second substrate;
wherein the first and second holding devices are configured for mutual approaching of the first and second substrates toward each other, for contacting of the first and second substrates at a bond initiation point and for generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; and

influencing means for influencing the bonding wave during the advancing of the bonding wave, wherein the influencing means include mechanical actuators for deforming the first holding surface of the first holding device, and thereby deforming the first substrate fixed on the first holding surface.

5. The device according to claim 4 , wherein the mechanical actuators shrink and/or stretch said first holding surface.

6. The device according to claim 4 , wherein the mechanical actuators include pneumatic actuators and/or hydraulic actuators and/or piezoelectric actuators.

7. The device according to claim 4 , wherein the mechanical actuators are radially and symmetrically distributed around the first holding device.

8. The device according to claim 7 , wherein there are at least three mechanical actuators arranged with an angular spacing from one another of 120°.

9. The device according to claim 4 , wherein said bonding is fusion bonding.

10. A method for bonding a first substrate with a second substrate, said method comprising:
a) fixing of the first and second substrates to respective first and second holding devices, the first substrate fixed to a first holding surface of the first holding device and the second substrate fixed to a second holding surface of the second holding device;
b) arranging of the first and second substrates relative to each other;
c) mutual approaching of the first and second substrates toward each other;
d) contacting the first substrate with the second substrate at a bond initiation point;
e) generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates;
f) influencing the bonding wave during advancing of the bonding wave by controlling spacing between the first and second substrates.

11. The method according to claim 10 , wherein said bonding is fusion bonding.

12. A device for the bonding of a first substrate with a second substrate, said device comprising:
a first holding device having a first holding surface for holding and fixing the first substrate;
a second holding device having a second holding surface for holding and fixing the second substrate;
wherein the first and second holding devices are configured for mutual approaching of the first and second substrates toward each other, for contacting of the first and second substrates at a bond initiation point and for generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; and

influencing means for influencing the bonding wave during the advancing of the bonding wave, wherein the influencing means include spacing-changing means for changing spacing between the first and second substrates.

13. The device according to claim 12 , wherein said bonding is fusion bonding.

14. A method for bonding a first substrate with a second substrate, said method comprising:
a) fixing of the first and second substrates to respective first and second holding devices, the first substrate fixed to a first holding surface of the first holding device and the second substrate fixed to a second holding surface of the second holding device;
b) arranging of the first and second substrates relative to each other;
c) mutual approaching of the first and second substrates toward each other;
d) contacting the first substrate with the second substrate at a bond initiation point;
e) generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates;
f) influencing the bonding wave during advancing of the bonding wave by controlling ambient pressure of an atmosphere surrounding the first and second substrates, wherein increasing of said ambient pressure decelerates the advancing of the bonding wave and decreasing of said ambient pressure accelerates the advancing of the bonding wave.

15. The method according to claim 14 , wherein said ambient pressure is changed at a rate of more than 1 mbar/s.

16. The method according to claim 14 , wherein said ambient pressure is controlled such that a speed of the bonding wave is less than 50 cm/s.

17. The method according to claim 14 , wherein said ambient pressure is controlled such that a speed of the bonding wave is reduced by more than 0.1 cm/s.

18. The method according to claim 14 , wherein said bonding is fusion bonding.

19. A device for the bonding of a first substrate with a second substrate, said device comprising:
a first holding device having a first holding surface for holding and fixing the first substrate;
a second holding device having a second holding surface for holding and fixing the second substrate;
wherein the first and second holding devices are configured for mutual approaching of the first and second substrates toward each other, for contacting of the first and second substrates at a bond initiation point and for generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; and

influencing means for influencing the bonding wave during the advancing of the bonding wave, wherein the influencing means include a pressure-changing means for controlling ambient pressure of an atmosphere surrounding the first and second substrates, wherein increasing of said ambient pressure decelerates the advancing of the bonding wave and decreasing of said ambient pressure accelerates the advancing of the bonding wave.

20. The method according to claim 19 , wherein the pressure-changing means changes said ambient pressure at a rate of more than 1 mbar/s.

21. The device according to claim 19 , wherein the pressure-changing means controls said ambient

Assignees

• Ev Group E Thallner Gmbh

Inventors

• Wagenleitner Thomas
• Fehkuhrer Andreas

Classifications

• H10P72/0428 Primary

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P90/1914 Primary

  using bonding · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0434

  mainly by convection · CPC title