Apparatus for molecular adhesion bonding with compensation for radial misalignment

Patent metadata

Field	Value
Publication number	US-9818614-B2
Application number	US-201514820729-A
Country	US
Kind code	B2
Filing date	Aug 7, 2015
Priority date	Jul 7, 2010
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A method for bonding a first wafer onto a second wafer by molecular adhesion where the wafers have an initial radial misalignment between them. The method includes bringing the two wafers into contact so as to initiate the propagation of a bonding wave between the two wafers while a predefined bonding curvature is imposed on at least one of the two wafers during the contacting step as a function of the initial radial misalignment.

First claim

What is claimed is:

1. An apparatus for bonding a first wafer onto a second wafer by molecular adhesion, the apparatus comprising:
a microprocessor for calculating a predefined bonding curvature of the first wafer as a function of an initial radial misalignment between the first wafer and the second wafer, wherein the initial radial misalignment occurs as a result of different radial expansions of the first and second wafers;
a first holding support for holding the first wafer, wherein the first holding support comprises a jack for imposing the predefined bonding curvature on the first wafer;
a second holding support for holding the second wafer; and
a microcontroller for controlling the apparatus so that the second wafer is released from the second support before or while being brought in contact with the first wafer, so that the second wafer adapts to the bonding curvature imposed on the first wafer during the propagation of a bonding wave.

2. The apparatus of claim 1 , wherein the microprocessor calculates a radius of curvature corresponding to the predefined bonding curvature as the function of the initial radial misalignment.

3. The apparatus of claim 2 , wherein the microprocessor comprises a microprocessor system.

4. The apparatus of claim 1 , wherein the jack is driven according to a radius of curvature corresponding to the predefined bonding curvature.

5. The apparatus of claim 1 , wherein the first holding support has a curvature corresponding to the predefined bonding curvature.

6. The apparatus of claim 1 , further comprising a membrane interposed between the first wafer and the first holding support, the membrane having a curvature corresponding to the predefined bonding curvature.

7. The apparatus of claim 1 , wherein the initial radial misalignment is determined by bonding two wafers from a same wafer batch as the first wafer and the second wafer and measuring the misalignment between the two bonded wafers.

8. The apparatus of claim 7 , further comprising:
a sensor to measure the misalignment between the two bonded wafers at a plurality of positions on the two bonded wafers using infrared microscopy.

9. The apparatus of claim 8 , wherein the sensor carries out the measurement of the misalignment with alignment marks at centers and at peripheral portions of the two bonded wafers.

10. The apparatus of claim 9 , wherein the alignment marks at the peripheral portions are about half the distance between the centers and edges of the two bonded wafers.

11. The apparatus of claim 1 , further comprising:
a sensor to measure the misalignment between the two bonded wafers, and wherein the microprocessor determines a compensation radial misalignment in dependence at least in part on the initial radial misalignment between the first wafer and the second wafer.

12. The apparatus of claim 1 , wherein the predefined bonding curvature is calculated by K B =(8K F −(K 1 +K 2 ))/6, where K B is the predefined bonding curvature, K F is a post-bonding curvature of the combined structure of the first and second wafers, K 1 is the initial curvature of the first wafer, and K 2 is the initial curvature of the second wafer.

13. The apparatus of claim 1 , wherein the predefined bonding curvature is selected such that a desired post-bonding curvature of the combined structure of the first and second wafers is achieved.

14. The apparatus of claim 13 , wherein the desired post-bonding curvature is calculated by K F =(2(K 1 +K 2 )+12K B )/16, where K F is the desired post-bonding curvature, K 1 is the initial curvature of the first wafer, K 2 is the initial curvature of the second wafer, and K B is the predefined bonding curvature.

15. An apparatus for bonding a first wafer onto a second wafer by molecular adhesion, the apparatus comprising:
a first holding support for holding the first wafer, wherein the first holding support comprises a jack for imposing a predefined bonding curvature on the first wafer;
a second holding support for holding the second wafer;
a microcontroller or logic elements to control the apparatus so that the second wafer is released from the second support before or while being brought in contact with the first wafer, so that the second wafer adapts to the bonding curvature imposed on the first wafer during the propagation of a bonding wave; and
a microprocessor or microprocessor system for calculating the predefined bonding curvature or a radius of curvature corresponding to the predefined bonding curvature as the function of the initial radial misalignment, wherein the predefined bonding curvature is a function of an initial radial misalignment between the first wafer and the second wafer, wherein the initial radial misalignment occurs as a result of different radial expansions of the first and second wafers,
wherein the microprocessor or microprocessor system receives sensor information that defines radial wafer misalignments between two bonded wafers from a same wafer batch as the first wafer and the second wafer and computes therefrom bonding curvature information and wafer displacement information, which information is sent to the microcontroller or logic elements, and
wherein the microprocessor or the microprocessor system uses the radial wafer misalignments between the two bonded wafers as the initial radial misalignment.

16. A wafer bonding apparatus for bonding a first wafer onto a second wafer by molecular adhesion, the apparatus comprising:
a microprocessor for calculating a predefined bonding curvature of the first wafer as a function of an initial radial misalignment between the first wafer and the second wafer, wherein the initial radial misalignment occurs as a result of different radial expansions of the first and second wafers;
a first holding support assembly including a first holding support configured to hold the first wafer, the first holding support assembly configured to impose the predefined bonding curvature on the first wafer; and
a second holding support configured to hold the second wafer,
wherein the apparatus is configured to release the second wafer from the second support before or while being brought into contact with the first wafer such that the second wafer adapts to the bonding curvature imposed on the first wafer by the first holding support while a bonding wave propagates between the first wafer and the second wafer.

17. The wafer bonding apparatus of claim 16 , wherein the first holding support assembly includes a jack, actuation of the jack imposing the predefined bonding curvature on the first wafer held by the first holding support.

18. The wafer bonding apparatus of claim 16 , wherein the first holding support assembly includes a membrane interposed between the first wafer and the first holding support, the membrane having a curvature corresponding to the predefined bonding curvature.

19. The wafer bonding apparatus of claim 16 , wherein the predefined bonding curvature is imposed on the first wafer by the first holding support, the first holding support having a curvature corresponding to the predefined bonding curvature.

20. The wafer bonding apparatus of claim 16 , wherein the wafer bonding apparatus comprises a controller including a microcontroller or logic elements configured to receive sensor information defining radial wafer misalignments between the first wafer and the second wafer, the controller configured to compute bonding curvature information and wafer displacement information at least in part from the sensor information, the controlle

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Gaudin Gweltaz

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W72/941

  Dispositions of bond pads · CPC title