Chemical mechanical polishing method

Patent metadata

Field	Value
Publication number	US-11673223-B2
Application number	US-202217711724-A
Country	US
Kind code	B2
Filing date	Apr 1, 2022
Priority date	Nov 22, 2017
Publication date	Jun 13, 2023
Grant date	Jun 13, 2023

Abstract

A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

First claim

What is claimed is:

1. A chemical mechanical polishing method, comprising:
polishing a batch of wafers in sequence on a polishing surface of a polishing pad;
conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply a downward force according to a predetermined downward force stored in a controller to condition the polishing surface;
measuring the downward force actually applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface;
comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and
calibrating the downward force actually applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

2. The chemical mechanical polishing method as claimed in claim 1 , wherein the conditioning is performed during or after the polishing one of the wafers.

3. The chemical mechanical polishing method as claimed in claim 1 , wherein the pad conditioner is movable between a conditioning position over the polishing surface and the home position away from the polishing pad rather than over the polishing surface, and
wherein the pad conditioner is operable to apply the downward force according to the predetermined downward force stored in the controller to condition the polishing surface at the conditioning position, and move from the conditioning position to the home position after conditioning the polishing surface.

4. The chemical mechanical polishing method as claimed in claim 1 , wherein the measuring is performed at an interval between the polishing of two successive wafers of the wafers.

5. The chemical mechanical polishing method as claimed in claim 1 , wherein the measurement tool is disposed relative to the pad conditioner at the home position and separated from the pad conditioner.

6. The chemical mechanical polishing method as claimed in claim 1 , wherein the calibrating comprises adjusting the downward force actually applied by the pad conditioner to the predetermined downward force.

7. The chemical mechanical polishing method as claimed in claim 1 , wherein the measurement tool comprises a pressure transducer configured to measure the downward force actually applied by the pad conditioner to the measurement tool and provide an electric signal related to an amount of the measured downward force to the controller, and
wherein the controller is configured to adjust the downward force actually applied by the pad conditioner in response to the electric signal from the measurement tool.

8. The chemical mechanical polishing method as claimed in claim 1 , further comprising when the difference between the downward force measured by the measurement tool and the predetermined downward force is within the range of acceptable values, repeating the polishing, the conditioning, the measuring, and the comparing until all of the wafers are processed.

9. The chemical mechanical polishing method as claimed in claim 1 , further comprising after the calibrating, repeating the polishing, the conditioning, the measuring, and the comparing until all of the wafers are processed.

10. A chemical mechanical polishing method, comprising:
polishing a wafer on a polishing surface of a polishing pad;
conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply a downward force according to a predetermined downward force stored in a controller to condition the polishing surface at a conditioning position, and move from the conditioning position to a home position away from the polishing pad after the conditioning the polishing surface;
providing a measurement tool separate from the pad conditioner and measuring the downward force actually applied by the pad conditioner with the measurement tool after the conditioning, wherein the measurement tool is disposed relative to the pad conditioner at the home position;
comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and
calibrating the downward force actually applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

11. The chemical mechanical polishing method as claimed in claim 10 , further comprising:
after the adjusting of the downward force actually applied by the pad conditioner, conditioning the polishing surface using the predetermined downward force by the pad conditioner again.

12. The chemical mechanical polishing method as claimed in claim 10 , wherein the calibrating comprises adjusting the downward force actually applied by the pad conditioner to the predetermined downward force.

13. A chemical mechanical polishing method, comprising:
polishing a wafer on a polishing surface of a polishing pad with a polishing head, wherein the polishing head holds the wafer in contact with the polishing surface during the polishing;
conditioning the polishing surface with a pad conditioner after the polishing, wherein the pad conditioner is operable to apply a downward force according to a predetermined downward force stored in a controller to condition the polishing surface;
after the conditioning, measuring the downward force actually applied by the pad conditioner with a measurement tool when the pad conditioner rests at a home position away from the polishing pad rather than over the polishing surface;
comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and
calibrating the downward force actually applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

14. The chemical mechanical polishing method as claimed in claim 13 , wherein the measurement tool is separately disposed in a processing chamber accommodating the polishing pad, the polishing head, and the pad conditioner.

15. The chemical mechanical polishing method as claimed in claim 14 , wherein the measurement tool comprises a pressure transducer configured to measure the downward force actually applied by the pad conditioner to the measurement tool, and a frame configured to surround and protect the pressure transducer from being exposed to environment in the processing chamber.

16. The chemical mechanical polishing method as claimed in claim 13 , wherein the polishing head comprises a retaining ring arranged along a periphery of the polishing head, a plurality of holes are formed on a surface of the retaining ring that faces the polishing surface, and the polishing head further comprises an exhaust system that connects to the holes via a fluid channel provided in the polishing head, wherein the exhaust system, the fluid channel, and the plurality of holes are arranged in different height planes, and wherein the chemical mechanical polishing method further comprising:
vacuuming the fluid channel with the exhaust system so that polished debris can be removed from the polishing surface through the h

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wei Yu-Chen
• Su Jheng-Si
• Lin Shih-Ho
• Lai Jen-Chieh
• Chan Chun-Chieh

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• B24B37/20 Primary

  Lapping pads for working plane surfaces · CPC title

• B24B49/16

  taking regard of the load · CPC title

• B24B53/001

  involving the use of electric current · CPC title

• B24B37/04

  designed for working plane surfaces · CPC title