Selective etching process for SiGe and doped epitaxial silicon
US-12062571-B2 · Aug 13, 2024 · US
US9362129B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9362129-B2 |
| Application number | US-201314061673-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 23, 2013 |
| Priority date | Oct 26, 2012 |
| Publication date | Jun 7, 2016 |
| Grant date | Jun 7, 2016 |
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A polishing apparatus is used for polishing a surface of a substrate such as a semiconductor wafer to planarize the surface of the substrate. The polishing apparatus includes a polishing table having a polishing surface, and a top ring configured to hold a substrate with an outer circumferential edge of the substrate surrounded by a retainer ring and to press the substrate against the polishing surface. The top ring is movable between a polishing position above the polishing table, a position laterally of the polishing table, and a cleaning position. The polishing apparatus includes a cleaning unit disposed in the cleaning position and configured to eject a cleaning liquid toward the lower surface of the top ring, which is being rotated, thereby cleaning the substrate held by the top ring together with the lower surface of the top ring.
Opening claim text (preview).
What is claimed is: 1. A polishing apparatus for polishing a substrate, comprising: a polishing table configured to support a polishing surface; a top ring configured to hold a substrate with an outer circumferential edge of the substrate surrounded by a retainer ring and to press the substrate against said polishing surface, said top ring being movable between a polishing position above said polishing table and a substrate transfer position for transferring the substrate between a substrate transfer mechanism provided in the substrate transfer position and the top ring; and a cleaning unit disposed between the polishing table and the substrate transfer mechanism, and located in a cleaning position on a moving path of the top ring, the cleaning unit being configured to eject a cleaning liquid toward a lower surface of said top ring, which is rotatable, thereby cleaning the substrate when held by said top ring together with the lower surface of said top ring when said top ring is positioned at said cleaning position; wherein said cleaning unit includes a first cleaning nozzle comprising a plurality of ejection ports directed upwardly and disposed in equally spaced intervals along a circumferential direction of said first cleaning nozzle; and wherein said plurality of ejection ports of the first cleaning nozzle being positioned directly below an inside edge of said retainer ring and a clearance created between an outer circumferential edge of the substrate when held by said top ring and said retainer ring which surrounds the outer circumferential edge of the substrate, when said top ring is positioned at said cleaning position. 2. A polishing apparatus according to claim 1 , wherein said cleaning unit has a second cleaning nozzle having an ejection port, said ejection port of said second cleaning nozzle being configured to eject the cleaning liquid upwardly toward a lower surface of said top ring located at said cleaning position. 3. A polishing apparatus according to claim 2 , wherein said second cleaning nozzle has a plurality of ejection ports. 4. A polishing apparatus according to claim 2 , wherein said first cleaning nozzle has a semicircular shape, and said second cleaning nozzle has a straight shape. 5. A polishing apparatus according to claim 1 , further comprising: another cleaning unit provided separately from said cleaning unit and configured to clean the substrate cleaned by said cleaning unit; and a transport mechanism configured to transport the substrate from said substrate transfer position to said another cleaning unit. 6. A polishing apparatus according to claim 3 , wherein said ejection ports of said first cleaning nozzle are provided at equally spaced intervals along a circular arc so that said ejection ports of said first cleaning nozzle eject the cleaning liquid toward the clearance created between the outer circumferential edge of the substrate held by said top ring and said retainer ring, and said ejection ports of said second cleaning nozzle are provided at equally spaced intervals along a diametrical direction of said top ring. 7. A polishing apparatus according to claim 1 , wherein said first cleaning nozzle has an upper surface lying flush with the upper surface of said polishing table. 8. A polishing apparatus according to claim 1 , wherein when said top ring is positioned at said cleaning position, said top ring and said polishing table do not vertically overlap each other. 9. A polishing apparatus according to claim 1 , wherein when said top ring is positioned at said cleaning position, said top ring has a portion vertically overlapping said polishing table.
comprising at least one polishing chamber · CPC title
using mainly spraying means, e.g. nozzles · CPC title
of semiconductor materials · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Apparatus for mechanical treatment or grinding or cutting · CPC title
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