Semiconductor structure and process thereof
US-9570339-B2 · Feb 14, 2017 · US
Semiconductor device and method for fabricating the same
US11569133B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11569133-B2 |
| Application number | US-202016859959-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2020 |
| Priority date | Dec 4, 2017 |
| Publication date | Jan 31, 2023 |
| Grant date | Jan 31, 2023 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes a fin-shaped structure on a substrate, a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure, and a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure. Preferably, the SDB structure includes a bottom portion and a top portion on the bottom portion, in which the top portion and the bottom portion include different widths.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a fin-shaped structure on a substrate; a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure; a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure, wherein the SDB structure comprises: a bottom portion; and a top portion on the bottom portion, wherein the top portion and the bottom portion comprise different widths, a top surface of the bottom portion is higher than a top surface of the fin-shaped structure and even with a top surface of the gate structure. 2. A semiconductor device, comprising: a fin-shaped structure on a substrate; a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure; a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure, wherein the SDB structure comprises: a bottom portion; and a top portion on the bottom portion, wherein the top portion and the bottom portion comprise different widths and a top surface of the bottom portion is higher than a top surface of the fin-shaped structure; and an air gap in the SDB structure, wherein a top surface of the air gap is higher than a top surface of the gate structure.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L21/823481Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US11569133B2 cover?
- A semiconductor device includes a fin-shaped structure on a substrate, a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure, and a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure. Preferably, the SDB structure includes a bottom portion and a top portion on the bottom portion, in which the top portion…
- Who is the assignee on this patent?
- United Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L21/823481. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 31 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).