Manufacturing method of magnetoresistive effect element

Patent metadata

Field	Value
Publication number	US-2016240772-A1
Application number	US-201615134840-A
Country	US
Kind code	A1
Filing date	Apr 21, 2016
Priority date	Nov 18, 2013
Publication date	Aug 18, 2016
Grant date	—

Abstract

This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

First claim

1 . A manufacturing method of a magnetoresistive effect element comprising:
a first step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a second step of cooling the substrate after the first step; a third step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the second step; a fourth step of raising a temperature of the substrate after the third step, to a temperature that is higher than a dew-point temperature and is lower than a crystallization temperature of the other one of the magnetization free layer and the magnetization fixed layer; a fifth step of forming a top electrode on the other one of the magnetization free layer and the magnetization fixed layer after the fourth step; and a sixth step of raising the temperature of the substrate after the fifth step, to a temperature equal to or higher than the crystallization temperature.

2 . (canceled)

3 . The manufacturing method according to claim 1 , further comprising a step of forming a pin layer after the fourth step.

4 . The manufacturing method according to claim 1 , further comprising a step of forming a pin layer before the first step.

5 . The manufacturing method according to claim 1 , wherein the second step comprises cooling the substrate to a temperature equal to or below 200 K.

6 . The manufacturing method according to claim 1 , wherein:
each of the magnetization free layer and the magnetization fixed layer is a CoFeB layer, the other one of the magnetization free layer and the magnetization fixed layer includes an amorphous phase, and boron content of the other one of the magnetization free layer and the magnetization fixed layer is equal to or below 15 at %.

7 . The manufacturing method according to claim 1 , wherein the magnetoresistive effect element is a perpendicular magnetization-type MTJ element.

Assignees

• Canon Anelva Corp

Inventors

• Seino Takuya
• Otani Yuichi
• Nishimura Kazumasa

Classifications

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/0434 Primary

  mainly by convection · CPC title

• H01F41/302

  for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices (spin-exchange-coupled multilayers H01F10/32) · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/123

  having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films · CPC title