Magnetic devices having perpendicular magnetic tunnel junction

Patent metadata

Field	Value
Publication number	US-9299923-B2
Application number	US-201514874376-A
Country	US
Kind code	B2
Filing date	Oct 2, 2015
Priority date	Aug 24, 2010
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.

First claim

What is claimed is:

1. A magnetic tunnel junction device comprising:
a free layer structure;
a pinned layer structure; and
a tunnel barrier between the free layer structure and the pinned layer structure,
wherein the pinned layer structure comprises:
a first magnetic layer having an intrinsic perpendicular magnetization property;
a second magnetic layer having an intrinsic in-plane magnetization property and extrinsic perpendicular magnetization direction; and
an exchange coupling layer interposed between the first and second magnetic layers,

wherein the exchange coupling layer is iridium, and
wherein the exchange coupling layer has a thickness of about 4 Å to about 6 Å.

2. The device of claim 1 , wherein the exchange coupling is antiferromagnetic exchange coupling.

3. The device of claim 1 , further comprises a non-magnetic metal oxide layer covering directly the free layer structure.

4. The device of claim 1 , wherein the first magnetic layer comprises at least one of:
a single-layer structure made of cobalt-platinum alloy or cobalt-platinum alloy added with an element X, where the element X is at least one of boron, ruthenium, chromium, tantalum, or oxide; or
a multi-layer structure including cobalt-containing layers and noble metal layers alternatingly stacked on each other,
wherein the cobalt-containing layers are formed of one of cobalt, cobalt iron, cobalt nickel, or cobalt chromium, and the noble metal layers are formed of one of platinum and palladium.

5. The device of claim 1 , wherein the second magnetic layer is a single- or dual-layered structure including at least one of Co, CoFeB, CoFeBTa, CoHf, or CoZr.

6. The device of claim 1 , wherein the free layer structure comprises:
a free layer having the intrinsic in-plane magnetization property; and
a non-magnetic metal oxide layer to induce a perpendicular magnetization property to the free layer.

7. The device of claim 6 , wherein the free layer is a single- or multi-layer structure including at least one of Fe, Co, Ni, CoFe, NiFe, NiFeB, CoFeB, CoFeBTa, CoHf, or CoZr.

8. The device of claim 6 , wherein the non-magnetic metal oxide layer is a single- or multi-layer structure including at least one of tantalum oxide, magnesium oxide, ruthenium oxide, iridium oxide, platinum oxide, palladium oxide, or titanium oxide and being in direct contact with the free layer.

9. A magnetic tunnel junction device comprising:
a free layer structure;
a pinned layer structure; and
a tunnel barrier between the free layer structure and the pinned layer structure,
wherein the pinned layer structure comprises:
a first magnetic layer having an intrinsic perpendicular magnetization property;
a second magnetic layer having an intrinsic in-plane magnetization property and extrinsic perpendicular magnetization direction; and
an exchange coupling layer interposed between the first and second magnetic layers,

wherein a thickness of the exchange coupling layer is greater than 5 Å and less than or equal to 6 Å.

10. The device of claim 9 , wherein the exchange coupling is antiferromagnetic exchange coupling.

11. The device of claim 10 , wherein the exchange coupling layer is iridium.

12. The device of claim 9 , further comprises a non-magnetic metal oxide layer covering directly the free layer structure.

13. The device of claim 9 , wherein the first magnetic layer comprises at least one of:
a single-layer structure made of cobalt-platinum alloy or cobalt-platinum alloy added with an element X, where the element X is at least one of boron, ruthenium, chromium, tantalum, or oxide; or
a multi-layer structure including cobalt-containing layers and noble metal layers alternatingly stacked on each other,
wherein the cobalt-containing layers are formed of one of cobalt, cobalt iron, cobalt nickel, or cobalt chromium, and the noble metal layers are formed of one of platinum and palladium.

14. The device of claim 9 , wherein the second magnetic layer is a single- or dual-layered structure including at least one of Co, CoFeB, CoFeBTa, CoHf, or CoZr.

15. The device of claim 9 , wherein the free layer structure comprises:
a free layer having the intrinsic in-plane magnetization property; and
a non-magnetic metal oxide layer to induce a perpendicular magnetization property to the free layer.

16. The device of claim 15 , wherein the free layer is a single- or multi-layer structure including at least one of Fe, Co, Ni, CoFe, NiFe, NiFeB, CoFeB, CoFeBTa, CoHf, or CoZr.

17. The device of claim 15 , wherein the non-magnetic metal oxide layer is a single- or multi-layer structure including at least one of tantalum oxide, magnesium oxide, ruthenium oxide, iridium oxide, platinum oxide, palladium oxide, or titanium oxide and being in direct contact with the free layer.

18. A magnetic tunnel junction device comprising:
a free layer structure;
a pinned layer structure; and
a tunnel barrier between the free layer structure and the pinned layer structure,
wherein the pinned layer structure comprises:
a first magnetic layer having an intrinsic perpendicular magnetization property;
a second magnetic layer having an intrinsic in-plane magnetization property and extrinsic perpendicular magnetization direction; and
an exchange coupling layer interposed between the first and second magnetic layers,
wherein a thickness of the exchange coupling layer is about 5 Å to about 6 Å.

19. The device of claim 18 , wherein the exchange coupling layer comprises iridium (Ir).

Assignees

• Oh Sechung
• Kim Ki Woong
• Kim Younghyun
• Kim Whankyun
• Park Sang Hwan
• Samsung Electronics Co Ltd

Inventors

• Oh Sechung
• Kim Ki Woong
• Kim Younghyun
• Kim Whankyun
• Park Sang Hwan

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/123

  having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• H01F10/3295

  Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers · CPC title