Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application

Patent metadata

Field	Value
Publication number	US-9331271-B2
Application number	US-201314098604-A
Country	US
Kind code	B2
Filing date	Dec 6, 2013
Priority date	Jul 17, 2009
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc 0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

First claim

We claim:

1. A method of forming a STT-RAM MTJ nanopillar on a substrate comprised of a bottom electrode, comprising:
(a) sequentially forming a MTJ stack of layers comprised of a seed layer, an anti-ferromagnetic (AFM) layer, a SyAF pinned layer, a MgO tunnel barrier including an oxygen surfactant layer, a composite free layer, and a capping layer on said bottom electrode, the MgO tunnel barrier is made by a process comprising:
(1) sputter depositing a first Mg layer on the AP1 layer;
(2) oxidizing the first Mg layer with a natural oxidation (NOX) process;
(3) sputter depositing a second Mg layer on the oxidized first Mg layer;
(4) forming an oxygen surfactant layer on the second Mg layer; and
(5) sputter depositing a third Mg layer on the oxygen surfactant layer

and the composite free layer comprises:
(1) a FL1 magnetic layer comprised of [Co X Fe (1−X) ] 80 B 20 where x is between 10 and 30, and with a first thickness formed on the MgO tunnel barrier;
(2) a NCC layer formed on the FL1 magnetic layer and comprised of R(M) grains that are formed in a metal (M) oxide, nitride, or oxynitride insulator matrix where R is Fe, Ni, Co, or a combination thereof, and M is a metal, the NCC layer has a thickness which is less than or equal to the R(M) grain diameter of about 10 Angstroms; and
(3) a FL2 magnetic layer comprised of [Co X Fe (1−X) ] 80 B 20 and formed on the NCC layer, and having a second thickness less than the first thickness;

(b) annealing the MTJ stack of layers; and
(c) patterning the MTJ stack of layers.

2. The method of claim 1 wherein the SyAF pinned layer has an AP2/coupling/AP1 configuration wherein the AP2 layer contacts the AFM layer, the coupling layer is Ru, and the AP1 layer is CoFeB, CoFe, or a combination thereof.

3. The method of claim 1 wherein the NOX process comprises an oxygen flow rate of about 0.1 to 1 standard liters per minute, a pressure between about 0.05 and 1 torr, and a time of about 30 to 500 seconds.

4. The method of claim 1 wherein the AP1 layer has a [Co X Fe (100−X) ] 80 B 20 composition where x is from about 10 to 30.

5. The method of claim 1 wherein the first thickness is about 18 to 24 Angstroms as determined by a high resolution (HR) TEM measurement, and the second thickness is between about 5 and 16 Angstroms as determined by a HR-TEM measurement.

6. The method of claim 1 wherein the insulator matrix is SiO 2 , R is Fe, and the thickness of the FeSiO NCC layer in the composite free layer is about 6 to 10 Angstroms.

7. The method of claim 1 further comprised of forming a second NCC layer on the FL2 magnetic layer and a third magnetic (FL3) layer with a [Co X Fe (100−X) ] 80 B 20 composition on the second NCC layer to give a dual NCC configuration represented by FL1/NCC/FL2/NCC/FL3 wherein the NCC layers each have a thickness equal to or less than the R(M) grain diameter of about 10 Angstroms.

8. The method of claim 1 wherein the capping layer has a NCC/Ru configuration wherein the NCC layer in the capping layer has a thickness from about 5 to 6 Angstroms, and the NCC layer in the composite free layer has a thickness of about 6 to 7 Angstroms.

9. The method of claim 1 wherein said annealing step comprises a temperature of about 330° C. to 360° C. and an applied magnetic field from about 5000 to 10000 Oe.

10. The method of claim 1 wherein sequentially forming a MTJ stack of layers is further comprised of forming a hard mask on the capping layer.

11. The method of claim 4 wherein the AP1 layer has a [Co X Fe (100−X) ] 80 B 20 composition and x is equal to an x value selected for the FL1 and FL2 layers.

12. The method of claim 1 wherein the insulator matrix is aluminum oxide, R is Fe, Co, or CoFe, and M is Al.

13. The method of claim 7 wherein the FL1 layer has a thickness from about 13 to 20 Angstroms, the FL2 layer has a thickness between about 4 and 5 Angstroms, and the FL3 layer has a thickness from about 4 to 12 Angstroms.

Assignees

• Headway Technologies Inc

Inventors

• Horng Cheng T
• Tong Ru-Ying
• Liu Guangli
• Beach Robert
• Kula Witold
• Min Tai

Classifications

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• Y10T428/1114

  having tunnel junction effect · CPC title