System and methods for wafer drying

Patent metadata

Field	Value
Publication number	US-11515178-B2
Application number	US-202016820344-A
Country	US
Kind code	B2
Filing date	Mar 16, 2020
Priority date	Mar 16, 2020
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

First claim

What is claimed is:

1. A method for wafer drying, the method comprising:
providing a surface of a first wafer with a plurality of high aspect ratio features disposed at the surface of the first wafer, the surface of the first wafer comprising a liquid to be removed with a drying process;
in a first processing chamber, replacing the liquid with a first solid film, the first solid film covering the surface of the first wafer;
transferring the first wafer from the first processing chamber to a second processing chamber;
processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, wherein the supercritical fluid removes the first solid film progressively;
purging the supercritical fluid from the second processing chamber; and
removing the first wafer from the second processing chamber after depressurizing the second processing chamber and stopping the flow of the supercritical fluid to the second processing chamber.

2. The method of claim 1 , further comprising:
before replacing the liquid with the first solid film, performing a rinsing process on the plurality of high aspect ratio features disposed at the surface of the first wafer.

3. The method of claim 2 , wherein the liquid to be removed is a rinsing liquid from the rinsing process.

4. The method of claim 2 , further comprising removing a rinsing liquid from the rinsing process by treating the wafer with isopropyl alcohol, wherein the liquid to be removed is the isopropyl alcohol.

5. The method of claim 1 , wherein the first solid film surrounds and covers the high aspect ratio features.

6. The method of claim 1 , further comprising:
providing a surface of a second wafer with a plurality of high aspect ratio features disposed at the surface of the second wafer, the surface of the second wafer comprising the liquid to be removed with the drying process;
in the first processing chamber, replacing the liquid with a second solid film, the second solid film covering the surface of the second wafer;
transferring the second wafer from the first processing chamber to a second processing chamber; and
processing the second wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, wherein the supercritical fluid removes the second solid film.

7. The method of claim 6 , wherein the first wafer and the second wafer are simultaneously processed in the second processing chamber, wherein the second wafer is removed after the depressurizing of the second processing chamber and the stopping of the flow of the supercritical fluid to the second processing chamber.

8. A method for wafer drying, the method comprising:
providing a surface of a first wafer with a plurality of high aspect ratio features disposed at the surface of the first wafer, the surface of the first wafer comprising a liquid to be removed with a drying process;
forming a first solid film covering the surface of the first wafer in a first processing chamber;
transferring the first wafer from the first processing chamber to a second processing chamber;
flowing a fluid within the second processing chamber;
pressurizing the fluid to flow through the second processing chamber in a supercritical phase;
removing, in the second processing chamber, the first solid film from the surface of the first wafer by sublimating the first solid film into the supercritical phase of the fluid;
purging the fluid from the second processing chamber; and
removing the first wafer from the second processing chamber after depressurizing the second processing chamber and stopping the flow of the fluid to the second processing chamber.

9. The method of claim 8 , further comprising:
before forming the first solid film, performing a rinsing process step on the plurality of high aspect ratio features disposed at the surface of the first wafer.

10. The method of claim 9 , wherein the liquid to be removed is a rinsing liquid from the rinsing process.

11. The method of claim 9 , further comprising removing a rinsing liquid from the rinsing process by treating the wafer with isopropyl alcohol, wherein the liquid to be removed is the isopropyl alcohol.

12. The method of claim 8 , wherein the first solid film surrounds and covers the high aspect ratio features.

13. The method of claim 8 , further comprising:
providing a surface of a second wafer to be dried with a plurality of high aspect ratio features disposed at the surface of the second wafer;
forming a second solid film covering the surface of the second wafer in the first processing chamber; and
removing the second solid film from the surface of the second wafer by sublimating the second solid film into the supercritical phase of the fluid.

14. The method of claim 13 , wherein the first wafer and the second wafer are simultaneously processed in the second processing chamber.

15. The method of claim 8 , further comprising:
processing the surface of the first wafer with a liquid before forming the first solid film, wherein forming the first solid film replaces the liquid with the first solid film.

16. The method of claim 1 , wherein a width to height ratio of the high aspect ratio features ranges from 1:5 to 1:100.

17. The method of claim 8 , wherein a width to height ratio of the high aspect ratio features ranges from 1:5 to 1:100.

18. A method for wafer drying, the method comprising:
providing a surface of a first wafer with a first plurality of features disposed at the surface of the first wafer;
providing a surface of a second wafer with a second plurality of features disposed at the surface of the second wafer, the surface of the first and the second wafers comprising a liquid to be removed with a drying process, wherein a width to height ratio of the first and the second plurality of features ranges from 1:5 to 1:100;
in a first processing chamber, replacing the liquid over the first wafer with a first solid film and replacing the liquid over the second wafer with a second solid film, the first solid film covering the surface of the first wafer and the second solid film covering the surface of the second wafer;
transferring the first and the second wafers from the first processing chamber to a second processing chamber;
processing the first wafer and the second wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, wherein the supercritical fluid removes the first solid film and the second solid film progressively;
purging the supercritical fluid from the second processing chamber; and
removing the first wafer and the second wafer from the second processing chamber after depressurizing the second processing chamber and stopping the flow of the supercritical fluid to the second processing chamber.

Assignees

• Tokyo Electron Ltd

Inventors

• Hurd Trace
• Rotondaro Antonio Luis Pacheco
• Bassett Derek William
• Kosugi Hitoshi

Classifications

• H10P72/0461

  characterised by the presence of two or more transfer chambers · CPC title

• H10P72/0411

  for wet cleaning or washing · CPC title

• H10P72/0408 Primary

  for drying · CPC title

• H10P70/80 Primary

  Cleaning only by supercritical fluids · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title