Substrate processing apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11450536-B2
Application number	US-202117211951-A
Country	US
Kind code	B2
Filing date	Mar 25, 2021
Priority date	Mar 27, 2020
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module;
a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and
a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container,
wherein the first vacuum-exhauster includes:
a first booster pump with a first intake port formed forward at a position substantially facing a first exhaust port installed backward at a rear side of the first process container;
a first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first pressure regulator, a first gate valve, and a first bellows installed at a flow path in series; and
an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

2. The substrate processing apparatus of claim 1 , wherein the first vacuum-exhauster is arranged close to a rear surface of the first utility system, and the first vacuum-exhauster has an installation area of less than 500×500 mm 2 .

3. The substrate processing apparatus of claim 2 , further comprising:
a second processing module arranged close to a side surface of the first processing module and including a second process container in which the at least one substrate is processed;
a second utility system including a second supply system configured to supply a second processing gas into the second process container, a surface of the second utility system is connected or arranged close to a rear surface of the second processing module; and
a second vacuum-exhauster arranged behind the second processing module such that an outer surface of the second vacuum-exhauster does not protrude more outward than an outer side surface of the second utility system, and configured to exhaust an inside of the second process container,
wherein the at least one substrate includes a plurality of substrates, the first process container is configured to accommodate the plurality of substrates arranged in multiple stages on a first substrate holder and thermally treat the substrates, and the second process container is configured to accommodate the plurality of substrates arranged in multiple stages on a second substrate holder and thermally treat the substrates,
wherein a first maintenance port configured to be capable of allowing the first process container or the first substrate holder to be taken out of the substrate processing apparatus is formed on the rear surface of the first processing module at a position below or above the first exhaust port, and
wherein a second maintenance port configured to be capable of allowing the second process container or the second substrate holder to be taken out of the substrate processing apparatus is formed at the rear surface of the second processing module at a position below or above a second exhaust port installed at a rear side of the second process container.

4. The substrate processing apparatus of claim 3 , wherein a maintenance area, which is formed by being sequentially surrounded by the first vacuum-exhauster, the first utility system, the first processing module, the second processing module, the second utility system, and the second vacuum-exhauster, is configured to have a width and a height large enough to unload at least one selected from the group of the first process container, the first substrate holder, the second process container, and the second substrate holder taken out via the first maintenance port and the second maintenance port respectively.

5. The substrate processing apparatus of claim 3 , wherein the second vacuum-exhauster includes a second booster pump, the second vacuum-exhauster is arranged close to a rear surface of the second utility system, and the second vacuum-exhauster includes a second intake port formed at a position substantially facing the second exhaust port, and further comprising:
a second exhaust pipe configured to substantially linearly bring the second exhaust port into fluid communication with the second intake port and including a second pressure regulator, a second gate valve, and a second bellows installed at a flow path in series,
wherein the first booster pump and the second booster pump have a rotating shaft respectively extending in the vertical direction, and
wherein the first vacuum-exhauster includes a first gantry configured to match a height of the first intake port with the first exhaust port, and the second vacuum-exhauster includes a second gantry configured to match a height of the second intake port with the second exhaust port.

6. The substrate processing apparatus of claim 5 , wherein the first pressure regulator, the first gate valve, the second pressure regulator, and the second gate valve are configured to be openable at flow path cross-sectional areas equal to or larger than cross-sectional areas of the first exhaust pipe and the second exhaust pipe respectively.

7. A substrate processing apparatus, comprising:
a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module;
a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module;
a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container;
an exhaust pipe configured to bring the first process container into fluid communication with the first vacuum-exhauster;
a pipe housing configured to support the exhaust pipe; and
a vibration-damper installed on at least one connector between the pipe housing and the exhaust pipe,
wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

8. The substrate processing apparatus of claim 7 , wherein the pipe housing includes a frame and a panel configured to cover an outside of the frame,
wherein the at least one connector is provided between the frame and the exhaust pipe, and
wherein the vibration-damper is installed at the at least one connector.

9. The substrate processing apparatus of claim 7 , wherein the exhaust pipe includes a flexible portion configured to allow displacement of an end of the exhaust pipe, and the at least one connector includes a plurality of connectors installed closer to the first process container than the flexible portion.

10. The substrate processing apparatus of claim 9 , wherein the flexible portion is installed at the exhaust pipe near the first vacuum-exhauster.

11. The substrate processing apparatus of claim 9 , wherein the flexible portion is further configured such that a fixing tool configured to fix both ends of the flexible portion is attachable to the flexible portion.

12. A substrate processing apparatus, comprising:
a processing module including a process container in which at least one substrate is processed and a substrate loading

Assignees

• Kokusai Electric Corp

Inventors

• Kamimura Daigi
• Taniyama Tomoshi
• Shirako Kenji
• Shimada Hironori
• Horii Akira
• Nakada Takayuki
• YAMASHIMA Norihiro

Classifications

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• H01J37/3244

  Gas supply means · CPC title