Substrate processing apparatus, exhaust system and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10163663-B2
Application number	US-201715820793-A
Country	US
Kind code	B2
Filing date	Nov 22, 2017
Priority date	Nov 24, 2016
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a processing furnace;
an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall surface; and
an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall,
wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

2. The substrate processing apparatus according to claim 1 , further comprising a gas supply unit having a first sidewall and a second sidewall and configured to supply the gas to the process chamber, wherein only the second sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the gas supply unit.

3. The substrate processing apparatus according to claim 1 , wherein a center of an inlet port of the exhaust device and a center of an outlet port of the exhaust device are misaligned form each other.

4. The substrate processing apparatus according to claim 1 , further comprising a cover accommodating the connecting pipe.

5. The substrate processing apparatus according to claim 4 , wherein the cover further accommodates the exhaust device.

6. The substrate processing apparatus according to claim 1 , wherein the exhaust unit comprises: a pipe where the gas flows; a sensor configured to detect a pressure of the gas flowing in the pipe; and a valve configured to adjust the pressure of the gas flowing in the pipe by controlling an opening degree thereof.

7. The substrate processing apparatus according to claim 2 , wherein the gas supply unit comprises: a pipe where the gas flows; and a flow rate controller configured to control a flow rate of the gas flowing in the pipe.

8. An exhaust system comprising:
an exhaust unit configured to exhaust a gas from a process chamber defined by a processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall surface; and
an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall,
wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

9. A method for manufacturing a semiconductor device, comprising:
(a) supplying a source gas;
(b) supplying a reactive gas; and
(c) exhausting the source gas and the reactive gas,
wherein in (c), the source gas and the reactive gas are exhausted by an exhaust system comprising:
an exhaust unit configured to exhaust a gas from a process chamber defined by a processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and
an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall,
wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Assignees

• Hitachi Int Electric Inc
• Kokusai Electric Corp

Inventors

• Yonejima Toshihiko
• Okuno Masanori
• Sakata Masakazu
• Okamiya Hiroki
• Kasai Takeshi
• Nogami Katsuaki
• Ozaki Takashi
• Kanayama Kenji
• Ogawa Unryu
• Nakashima Seiyo
• Yamada Tomoyuki
• Yamada Masayuki

Classifications

• H10P72/3302

  Mechanical parts of transfer devices · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title