Fan out package with integrated peripheral devices and methods

US11404339B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11404339-B2
Application numberUS-202016894434-A
CountryUS
Kind codeB2
Filing dateJun 5, 2020
Priority dateMar 28, 2018
Publication dateAug 2, 2022
Grant dateAug 2, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor device and method of including peripheral devices into a package is disclosed. In one example, a peripheral device includes a passive device such as a capacitor or an inductor. Examples are shown that include a peripheral device that is substantially the same thickness as a die or a die assembly. Examples are further shown that use this configuration in a fan out process to form semiconductor devices.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor device, comprising: a processor die, including a plurality of die contacts extending above a top surface of the die; an integrated routing layer directly deposited on the plurality of die contacts, wherein the integrated routing layer includes a routing layer width that is wider than the die; one or more solder bumps coupled directly to the integrated routing layer such that the integrated routing layer is between the die and the one or more solder bumps; a single encapsulant covering one or more sides of the die, and surrounding the plurality of die contacts, the single encapsulant extending laterally to the same width as the integrated routing layer; at least one encapsulated peripheral component located laterally adjacent to the processor die, and coupled directly to the integrated routing layer, wherein the at least one encapsulated peripheral component is a passive component, wherein a back surface of the die is a top surface of the semiconductor device. 2. The semiconductor device of claim 1 , wherein the at least one encapsulated peripheral component includes a capacitor. 3. The semiconductor device of claim 1 , wherein the at least one encapsulated peripheral component includes an inductor. 4. The semiconductor device of claim 1 , wherein the at least one encapsulated peripheral component is formed within a silicon substrate. 5. The semiconductor device of claim 1 , wherein the plurality of die contacts include a plurality of copper bumps. 6. The semiconductor device of claim 1 , wherein the at least one encapsulated peripheral component includes multiple peripheral components of different passive component types. 7. A semiconductor device, comprising: a processor die, including a plurality of die contacts; an integrated routing layer directly deposited on the plurality of die contacts, wherein the integrated routing layer includes a routing layer width that is wider than the die; one or more solder bumps coupled directly to the integrated routing layer such that the integrated routing layer is between the die and the one or more solder bumps; a single encapsulant covering one or more sides of the die, and surrounding the plurality of die contacts, the single encapsulant extending laterally to the same width as the integrated routing layer; and at least one encapsulated peripheral component located laterally adjacent to the processor die, and coupled directly to the integrated routing layer, wherein the at least one encapsulated peripheral component is a passive component, wherein a back surface of the die is a top surface of the semiconductor device. 8. The semiconductor device of claim 7 , wherein the at least one encapsulated peripheral component includes a capacitor. 9. The semiconductor device of claim 7 , wherein the at least one encapsulated peripheral component includes an inductor. 10. The semiconductor device of claim 7 , wherein the at least one encapsulated peripheral component is formed within a silicon substrate. 11. The semiconductor device of claim 7 , wherein the plurality of die contacts include a plurality of copper bumps. 12. The semiconductor device of claim 7 , wherein the at least one encapsulated peripheral component includes multiple peripheral components of different passive component types. 13. The semiconductor device of claim 7 , wherein the single encapsulant includes a planar surface that is coplanar with the plurality of die contacts. 14. A semiconductor device, comprising: a processor die, including a plurality of die contacts; an integrated routing layer deposited on the plurality of die contacts without solder, wherein the integrated routing layer includes a routing layer width that is wider than the die; a single encapsulant covering one or more sides of the die, and surrounding the plurality of die contacts, the single encapsulant extending laterally to the same width as the integrated routing layer; and at least one encapsulated peripheral component located laterally adjacent to the processor die, and coupled directly to the integrated routing layer, wherein the at least one encapsulated peripheral component is a passive component, wherein a back surface of the die is a top surface of the semiconductor device. 15. The semiconductor device of claim 14 , further including one or more solder bumps coupled directly to the integrated routing layer such that the integrated routing layer is between the die and the one or more solder bumps. 16. The semiconductor device of claim 14 , wherein the at least one encapsulated peripheral component includes a capacitor. 17. The semiconductor device of claim 14 , wherein the at least one encapsulated peripheral component includes an inductor. 18. The semiconductor device of claim 14 , wherein the at least one encapsulated peripheral component is formed within a silicon substrate.

Assignees

Inventors

Classifications

  • Fan-out layouts · CPC title

  • using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

  • batch processes · CPC title

  • H10W72/20Primary

    Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title

  • of bump connectors, dummy bumps or thermal bumps · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11404339B2 cover?
A semiconductor device and method of including peripheral devices into a package is disclosed. In one example, a peripheral device includes a passive device such as a capacitor or an inductor. Examples are shown that include a peripheral device that is substantially the same thickness as a die or a die assembly. Examples are further shown that use this configuration in a fan out process to form…
Who is the assignee on this patent?
Intel Ip Corp, Intel Corp
What technology area does this patent fall under?
Primary CPC classification H10W72/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 02 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).