Method for fabricating a semiconductor device comprising a paste layer and semiconductor device

Patent metadata

Field	Value
Publication number	US-11329021-B2
Application number	US-201916685318-A
Country	US
Kind code	B2
Filing date	Nov 15, 2019
Priority date	Nov 15, 2018
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.

First claim

What is claimed is:

1. A method for fabricating a semiconductor device comprising a paste layer, the method comprising:
attaching a substrate to a first carrier, the substrate comprising a plurality of semiconductor dies;
applying a layer of a paste to the substrate;
precuring the paste, wherein precuring the paste comprises applying electromagnetic irradiation;
structuring the layer above cutting regions of the substrate;
attaching the layer to a second carrier;
removing the first carrier from the substrate; and
cutting the substrate along the cutting regions.

2. The method of claim 1 , wherein the paste comprises an electrically conductive material.

3. The method of claim 2 , wherein the paste is a sinter paste.

4. The method of claim 1 , where the electromagnetic radiation comprises microwaves or photonic curing.

5. The method of claim 1 , where applying electromagnetic radiation includes using a laser or high energy flash lamp.

6. The method of claim 1 , wherein precuring the paste comprises in addition applying heat in a range of 25° C. to 250° C.

7. The method of claim 1 , wherein the semiconductor dies comprise a backside metallization layer and wherein the paste is applied to the backside metallization layer.

8. The method of claim 1 , wherein the substrate comprises a reinforcing structure and wherein the method further comprises:
removing the reinforcing structure prior to applying the paste.

9. The method of claim 4 , wherein the structuring comprises removing the paste above the cutting regions after the precuring.

10. The method of claim 9 , wherein the paste is removed by physical or chemical methods.

11. The method of claim 1 , further comprising:
masking the substrate above the cutting regions prior to applying the paste.

12. The method of claim 11 , wherein the substrate is masked using photoresist.

13. The method of claim 1 , wherein the structuring comprises arranging a photomask on the layer of the paste and removing the paste above the cutting regions.

14. The method of claim 1 , wherein the second carrier is a temporary carrier and wherein the method further comprises:
removing the plurality of semiconductor dies from the temporary carrier.

15. The method of claim 1 , wherein the applying the layer of the paste comprises a printing process.

16. The method of claim 1 , wherein the applying the layer of the paste comprises transferring the paste from a film onto the substrate.

Assignees

• Infineon Technologies Ag

Inventors

• Santos Rodriguez Francisco Javier
• Craes Fabian
• Eichinger Barbara
• Mischitz Martin
• Otto Frederik
• Thion Fabien

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/07338

  hardening the adhesive by curing, e.g. thermosetting · CPC title

• H10W72/07331

  Connecting techniques · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/354

  comprising polymers · CPC title