Manufacturing method of ESD protection device

Patent metadata

Field	Value
Publication number	US-11328946-B2
Application number	US-202117327783-A
Country	US
Kind code	B2
Filing date	May 24, 2021
Priority date	May 25, 2018
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A manufacturing method of the ESD protection device includes the following steps. A surface treatment is performed on the substrate. A link layer is formed on the substrate after the surface treatment, wherein a material of the link layer includes a metal material. A progressive layer is formed on the link layer, wherein a material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. A composite layer is formed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×107 to 1×108 Ω/sq.

First claim

What is claimed is:

1. A manufacturing method of an ESD protection device comprising the following steps:
A. performing a surface treatment on a substrate;
B. forming a link layer on the substrate after the surface treatment, wherein a material of the link layer comprises a metal material;
C. forming a progressive layer on the link layer, wherein a material of the progressive layer comprises a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer; and
D. forming a composite layer on the progressive layer, wherein the composite layer comprises a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10 7 Ω/sq to 1×10 8 Ω/sq.

2. The manufacturing method of the ESD protection device of claim 1 , wherein a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer is 0.005:1 to 0.01:1.

3. The manufacturing method of the ESD protection device of claim 1 , wherein:
step A comprises performing the surface treatment on the substrate using a plasma;
step B comprises providing a metal source and depositing a metal ion produced by the metal source on the substrate;
step C comprises providing an oxygen as a reaction gas at the same time the metal ion is provided by the metal source to deposit the resulting non-stoichiometric metal oxide material on the link layer, wherein a supply of the oxygen is gradually increased with a process time; and
step D comprises providing an oxygen as a reaction gas at the same time the metal ion is provided by the metal source to deposit the resulting stoichiometric metal oxide material and non-stoichiometric metal oxide material on the progressive layer, wherein a supply of the oxygen is configured such that the ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the resulting composite layer may make a sheet resistance of the composite layer 1×10 7 Ω/sq to 1×10 8 Ω/sq.

4. The manufacturing method of the ESD protection device of claim 3 , wherein step A to step D are performed using a same deposition equipment, and a same metal source is used in step B to step D.

5. The manufacturing method of the ESD protection device of claim 3 , wherein the plasma used in step A comprises an oxygen/argon plasma.

6. The manufacturing method of the ESD protection device of claim 3 , wherein the metal source comprises a metal target, and the metal target comprises a Ti target, an Al target, a Cu target, a Ni target, a Cr target, a Ta target, or a V target.

7. The manufacturing method of the ESD protection device of claim 3 , wherein step A to step D are performed using an arc ion plating apparatus, and the Ti target is used as the metal source in step B to step D.

Assignees

• Ind Tech Res Inst

Inventors

• Wang Ding-Shiang
• Chang Jia-Jen
• Leu Ming-Sheng
• Chen Tai-Sheng
• Shih Chin-Te

Classifications

• H10P72/1928

  characterised by the presence of antistatic elements · CPC title

• H10P72/1911

  characterised by materials, roughness, coatings or the like · CPC title

• H10P72/1902 Primary

  specially adapted for a single substrate · CPC title

• H10P72/155

  characterised by a material, a roughness, a coating or the like · CPC title

• H10P72/145

  characterised by a material, a roughness, a coating or the like · CPC title