Cleaning formulation for removing residues on surfaces

Patent metadata

Field	Value
Publication number	US-11286444-B2
Application number	US-202016998352-A
Country	US
Kind code	B2
Filing date	Aug 20, 2020
Priority date	Dec 6, 2013
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

First claim

What is claimed is:

1. A cleaning composition, comprising:
1) at least one redox agent in an amount of from about 0.5% to about 10% by weight of the composition;
2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid;
3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole;
4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and
5) water.

2. The composition of claim 1 , wherein the at least one redox agent comprises hydroxylamine.

3. The composition of claim 1 , wherein the at least one redox agent is from about 1% to about 10% by weight of the composition.

4. The composition of claim 1 , wherein the polyaminopolycarboxylic acid is selected from the ground consisting of mono- or polyalkylene polyamine polycarboxylic acids, polyaminoalkane polycarboxylic acids, polyaminoalkanol polycarboxylic acids, and hydroxyalkylether polyamine polycarboxylic acids.

5. The composition of claim 4 , wherein the polyaminopolycarboxylic acid is diethylenetriamine pentaacetic acid.

6. The composition of claim 1 , wherein the polyaminopolycarboxylic acid is from about 0.01% to about 0.5% by weight of the composition.

7. The composition of claim 1 , wherein the at least one metal corrosion inhibitor comprises a benzotriazole optionally substituted by at least one substituent selected from the group consisting of alkyl groups, aryl groups, halogen groups, amino groups, nitro groups, alkoxy groups, and hydroxyl groups.

8. The composition of claim 7 , wherein the at least one metal corrosion inhibitor comprises 5-methyl-1H-benzotriazole.

9. The composition of claim 1 , wherein the at least one metal corrosion inhibitor is from about 0.05% to about 0.5% by weight of the composition.

10. The composition of claim 1 , further comprising at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers.

11. The composition of claim 10 , wherein the at least one organic solvent comprises ethylene glycol butyl ether.

12. The composition of claim 10 , wherein the at least one organic solvent is from about 1% to about 15% by weight of the composition.

13. The composition of claim 1 , wherein the at least one pH adjusting agent comprises 1,8-diazabicyclo[5.4.0]undec-7-ene.

14. The composition of claim 1 , wherein the at least one pH adjusting agent is from about 0.1% to about 3% by weight of the composition.

15. The composition of claim 1 , wherein the water is from about 78% to about 98% by weight of the composition.

16. The composition of claim 1 , wherein the composition comprises hydroxylamine, diethylenetriamine pentaacetic acid, 5-methyl-1H-benzotriazole, 1,8-diazabicyclo[5.4.0]undec-7-ene, and water.

17. The composition of claim 16 , wherein the composition comprises:
hydroxylamine in an amount of from about 0.5% to about 10% by weight of the composition;
diethylenetriamine pentaacetic acid in an amount of from about 0.01% to about 0.5% by weight of the composition,
5-methyl-1H-benzotriazole in an amount of from about 0.05% to about 0.5% by weight of the composition;
1,8-diazabicyclo[5.4.0]undec-7-ene in an amount of from about 0.1% to about 3% by weight of the composition; and
water in an amount of from about 78% to about 98% by weight of the composition.

18. The composition of claim 17 , wherein the composition comprises:
hydroxylamine in an amount of from about 1% to about 10% by weight of the composition;
diethylenetriamine pentaacetic acid in an amount of from about 0.1% to about 0.5% by weight of the composition,
5-methyl-1H-benzotriazole in an amount of from about 0.2% to about 0.5% by weight of the composition;
1,8-diazabicyclo[5.4.0]undec-7-ene in an amount of from about 1% to about 2% by weight of the composition; and
water in an amount of from about 85% to about 95% by weight of the composition.

19. The composition of claim 16 , further comprising ethylene glycol butyl ether.

20. The composition of claim 19 , wherein the composition comprises:
hydroxylamine in an amount of from about 0.5% to about 10% by weight of the composition;
diethylenetriamine pentaacetic acid in an amount of from about 0.01% to about 0.5% by weight of the composition,
5-methyl-1H-benzotriazole in an amount of from about 0.05% to about 0.5% by weight of the composition;
1,8-diazabicyclo[5.4.0]undec-7-ene in an amount of from about 0.1% to about 3% by weight of the composition;
ethylene glycol butyl ether in an amount of from about 1% to about 15% by weight of the composition; and
water in an amount of from about 78% to about 98% by weight of the composition.

21. The composition of claim 20 , wherein the composition comprises:
hydroxylamine in an amount of from about 1% to about 10% by weight of the composition;
diethylenetriamine pentaacetic acid in an amount of from about 0.1% to about 0.5% by weight of the composition,
5-methyl-1H-benzotriazole in an amount of from about 0.2% to about 0.5% by weight of the composition;
1,8-diazabicyclo[5.4.0]undec-7-ene in an amount of from about 1% to about 2% by weight of the composition;
ethylene glycol butyl ether in an amount of from about 1% to about 15% by weight of the composition; and
water in an amount of from about 85% to about 95% by weight of the composition.

22. A method, comprising:
contacting a semiconductor substrate containing post etch residues and/or post ash residues with a cleaning composition of claim 1 .

23. The composition of claim 1 , wherein
the at least one first chelating agent is in an amount of from about 0.01% to about 0.5% by weight of the composition;
the at least one metal corrosion inhibitor is in an amount of from about 0.05% to about 0.5% by weight of the composition;
the at least one pH adjusting agent is in an amount of from about 0.1% to about 3% by weight of the composition; and
the water is in an amount of from about 78% to about 98% by weight of the composition.

24. The composition of claim 23 , wherein
the at least one redox agent is in an amount of from about 1% to about 10% by weight of the composition;
the at least one first chelating agent is in an amount of from about 0.1% to about 0.5% by weight of the composition;
the at least one metal corrosion inhibitor is in an amount of from about 0.2% to about 0.5% by weight of the composition;
the at least one pH adjusting agent is in an amount of from about 1% to about 2% by weight of the composition; and
the water is in an amount of from about 85% to about 95% by weight of the composition.

25. The composition of claim 24 , further comprising at least one organic solvent in an amount of from about 1% to about 15% by weight of the composition.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Takahashi Tomonori
• Du Bing
• Wojtczak William A
• Dory Thomas
• Kneer Emil A

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/287

  by chemical means · CPC title