Device and method for bonding of two substrates

Patent metadata

Field	Value
Publication number	US-11276589-B2
Application number	US-202117181632-A
Country	US
Kind code	B2
Filing date	Feb 22, 2021
Priority date	Sep 29, 2016
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

First claim

What is claimed is:

1. A device for bonding a first substrate surface of a first substrate to a second substrate surface of a second substrate, said device comprising:
a first substrate holder for accommodating the first substrate,
a second substrate holder for accommodating the second substrate,
wherein
at least the first substrate holder has a first recess with a fixing device for fixing the first substrate in the first recess, and an elevation at least partly surrounding the first recess; and
at least one of the first substrate holder and the second substrate holder has at least one hole for evacuating and/or rinsing the first recess, the first recess rinsed with a gas and/or a gas mixture with a negative Joule-Thompson coefficient (JTC) before and/or during and/or after bonding of the first substrate and the second substrate.

2. The device according to claim 1 , wherein the first recess is rinsed with the gas and/or the gas mixture with a negative JTC to at least partially remove a gas and/or a gas mixture with a positive JTC.

3. The device according to claim 1 , wherein the first recess is rinsed with the gas and/or the gas mixture with a negative JTC to entirely remove a gas and/or a gas mixture with a positive JTC.

4. The device according to claim 1 , wherein the gas and/or the gas mixture with a negative JTC includes helium, hydrogen or neon.

5. The device according to claim 2 , wherein the gas and/or the gas mixture with a positive JTC includes nitrogen.

6. The device according to claim 1 , wherein the elevation has an expansion surface for expansion of the first substrate surface.

7. The device according to claim 1 , wherein the first recess and/or the elevation is/are adapted to a shape of the first substrate, in such a manner that the substrate surface with the expansion surface forms a substantially continuous surface and/or merges into the elevation.

8. The device according to claim 1 , wherein the first recess and/or the elevation is adaptable manually and/or semi-automatically and/or automatically such that the substrate surface forms a substantially continuous surface with the expansion surface and/or merges into the elevation.

9. The device according to claim, 1 , wherein the first substrate holder has an outer component and an inner component movable in the outer component, wherein the outer component and/or the inner component is translationally and/or rotatably movable, wherein the outer and inner components are fixable to one another.

10. The device according to claim 6 , wherein a vertical distance between the first substrate surface and the expansion surface is adjustable.

11. The device according to claim 9 , wherein the at least one hole is arranged in a symmetrically distributed manner in the inner component.

12. The device according to claim 1 , wherein the elevation has an inwardly and/or outwardly curved expansion surface.

13. The device according to claim 1 , wherein the elevation has an inwardly and/or outwardly beveled extension surface at an angle (a).

14. A system comprised of the device according to claim 1 and the first substrate, wherein the first substrate surface merges into the elevation.

15. A method for bonding a first substrate surface of a first substrate to a second substrate surface of a second substrate by means of the device according to claim 1 , wherein a gas arranged between the first and second substrate surfaces during the bonding process is displaced from a centre to an edge of the first and second substrates, wherein
at least the first substrate surface merges into the elevation such that expansion of the gas only takes place outside the first and second substrates; and
the first recess is rinsed with a gas and/or a gas mixture with a negative JTC before and/or during and/or after the bonding of the first substrate and the second substrate.

Assignees

• Ev Group E Thallner Gmbh

Inventors

• Wimplinger Markus
• Kurz Florian
• Dragoi Viorel

Classifications

• H10P90/1914

  using bonding · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P10/128

  by direct semiconductor to semiconductor bonding · CPC title

• H10P72/0428 Primary

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H01L21/67092 Primary

  Electricity · mapped topic