Compound, resist composition, and method for forming resist pattern using it

Patent metadata

Field	Value
Publication number	US-11256170-B2
Application number	US-201615560059-A
Country	US
Kind code	B2
Filing date	Mar 2, 2016
Priority date	Mar 31, 2015
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

First claim

The invention claimed is:

1. A resist composition comprising one or more selected from a compound represented by the following general formula (1), a compound represented by the following general formula (2), and a resin obtained using these as monomers:

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; each R 2 is independently a halogen atom, a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, a hydroxy group, or a group obtained by replacing a hydrogen atom of a hydroxy group with an acid dissociation group, and may be the same or different on the same naphthalene ring or benzene ring; n is an integer of 1 to 4, and when n is an integer of 2 or greater in the general formulae (1) and (2), structural formulae of n repeating units may be the same or different; in the general formula (1), each m 1 is independently an integer of 0 to 7, provided that at least one m 1 is an integer of 1 to 7; in the general formula (2), each X is independently an oxygen atom or a sulfur atom, and each is independently an integer of 0 to 6, provided that at least one m 2 is an integer of 1 to 6; and in the general formulae (1) and (2), each q is independently 0 or 1; provided that in the general formulae (1) and (2), at least one R 2 is a group obtained by replacing a hydrogen atom of a hydroxy group with an acid dissociation group, and R 1 is a group comprising an iodine atom,
wherein the composition further comprises a solvent, an acid generating agent, and an acid diffusion controlling agent.

2. The resist composition according to claim 1 , wherein the compound represented by the above general formula (1) is a compound represented by the following general formula (1-1), and the compound represented by the above general formula (2) is a compound represented by the following general formula (2-1):

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; each R 3 is independently a halogen atom, a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, or an alkenyl group of 2 to 10 carbon atoms, and may be the same or different on the same naphthalene ring or benzene ring; each R 4 is independently a hydrogen atom or an acid dissociation group; n is an integer of 1 to 4, and when n is an integer of 2 or greater in the general formulae (1-1) and (2-1), structural formulae of n repeating units may be the same or different; in the general formula (1-1), each m 3 is independently an integer of 1 to 7, each m 4 is independently an integer of 0 to 6, and m 3 +m 4 is an integer of 1 to 7; in the general formula (2-1), each m 5 is independently an integer of 1 to 6, each m 6 is independently an integer of 0 to 5, and m 5 +m 6 is an integer of 1 to 6; and in the general formulae (1-1) and (2-1), each q is independently 0 or 1; provided that in the general formulae (1-1) and (2-1), at least one R 4 is an acid dissociation group, and R 1 is a group comprising an iodine atom.

3. The resist composition according to claim 1 , wherein the compound represented by the above general formula (1) is a compound represented by the following general formula (1-2), and the compound represented by the above general formula (2) is a compound represented by the following general formula (2-2):

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; each R 3 is independently a halogen atom, a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, or an alkenyl group of 2 to 10 carbon atoms, and may be the same or different on the same naphthalene ring or benzene ring; each R 4 is independently a hydrogen atom or an acid dissociation group; n is an integer of 1 to 4, and when n is an integer of 2 or greater in the general formulae (1-2) and (2-2), structural formulae of n repeating units may be the same or different; in the general formula (1-2), each m 4 is independently an integer of 0 to 6; in the general formula (2-2), each m 6 is independently an integer of 0 to 5; and in the general formulae (1-2) and (2-2), each q is independently 0 or 1; provided that in the general formulae (1-2) and (2-2), at least one R 4 is an acid dissociation group, and R 1 is a group comprising an iodine atom.

4. A method for forming a resist pattern, comprising the steps of coating a substrate with the resist composition according to claim 1 , thereby forming a resist film; exposing the formed resist film; and developing the exposed resist film.

5. The resist composition according to claim 1 , wherein the compound represented by the above general formula (1) is a compound represented by the following general formula (3), and the compound represented by the above general formula (2) is a compound represented by the following general formula (4):

wherein X′ is a halogen atom, or a monovalent group of 1 to 18 carbon atoms; each R 0 is independently an alkyl group of 1 to 4 carbon atoms or a halogen atom, and may be the same or different on the same naphthalene ring or benzene ring; R 4 is a hydrogen atom or an acid dissociation group; in the general formula (3), each p 1 is independently an integer of 0 to 5; in the general formula (4), each p 2 is independently an integer of 0 to 5; and in the general formulae (3) and (4), each q is independently 0 or 1; provided that in the general formulae (3) and (4), at least one R4 is an acid dissociation group, and X′ is a group comprising an iodine atom.

6. A compound represented by the following general formula (1):

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; each R 2 is independently a halogen atom, a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, or an alkenyl group of 2 to 10 carbon atoms, a hydroxy group, or a group obtained by replacing a hydrogen atom of a hydroxy group with an acid dissociation group, and may be the same or different on the same naphthalene ring or benzene ring; n is an integer of 1 to 4, and when n is an integer of 2 or greater, structural formulae of n repeating units may be the same or different; each m 1 is independently an integer of 0 to 7, provided that at least one m 1 is an integer of 1 to 7; and each q is independently 0 or 1; provided that in the general formula (1), at least one R 2 is a group obtained by replacing a hydrogen atom of a hydroxy group with an acid dissociation group, and R 1 is a group comprising an iodine atom.

7. The compound according to claim 6 , wherein the compound represented by the above general formula (1) is a compound represented by the following general formula (1-1):

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; each R 3 is independently a halogen atom, a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, or an alkenyl group of 2 to 10 carbon atoms, and may be the same or different on the same naphthalene ring or benzene ring; each R 4 is independently a hydrogen atom or an acid dissociation group; n is an integer of 1 to 4, and wh

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Toida Takumi
• Echigo Masatoshi
• Sato Takashi
• Shimizu Youko

Classifications

• G03F7/0046 Primary

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• C07D493/04

  Ortho-condensed systems · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• C08G10/02

  of aldehydes · CPC title

• G03F7/16

  Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) · CPC title