Oxidizing the Source and Doping the Drain of a Thin-Film Transistor
US-2015372150-A1 · Dec 24, 2015 · US
US9136121B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136121-B2 |
| Application number | US-201414296168-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 4, 2014 |
| Priority date | Jun 11, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
In lithography, a composition comprising a novolak resin comprising recurring units of fluorescein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO 2 substrates.
Opening claim text (preview).
The invention claimed is: 1. A photoresist underlayer film-forming composition for use in lithography, comprising a novolak resin comprising recurring units having the general formula (1) and a crosslinker: wherein R 1 and R 2 are independently hydrogen, an acid labile group, glycidyl group, or a straight, branched or cyclic C 1 -C 10 alkyl, acyl or alkoxycarbonyl, R…
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.