Cobalt precursor and methods for manufacture using the same

Patent metadata

Field	Value
Publication number	US-11254698-B2
Application number	US-201916702791-A
Country	US
Kind code	B2
Filing date	Dec 4, 2019
Priority date	Apr 23, 2019
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

First claim

What is claimed is:

1. A method for manufacturing a cobalt-containing layer on a substrate, the method comprising:
performing a deposition process using a cobalt precursor comprising at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2:

wherein R1 and R3 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl, and
R2 is hydrogen, or substituted or unsubstituted, linear or branched (C1-C6)alkyl,

wherein R4, R5 and R6 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl.

2. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises:
vaporizing the cobalt precursor in a container; and
supplying the vaporized cobalt precursor through a carrier gas into a process chamber which includes the substrate.

3. The method for manufacturing a cobalt-containing layer of claim 2 , wherein the vaporization of the cobalt precursor is performed at a temperature of about 0° C. to about 40° C.

4. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises thermal chemical vapor deposition (CVD), plasma-enhanced (PE) CVD, photo CVD, photoplasma CVD or atomic layer deposition (ALD).

5. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises supplying a reactant gas into a process chamber, and
the reactant gas is at least one selected from the group consisting of hydrogen (H 2 ), oxygen (O 2 ), ozone (O 3 ), nitrogen dioxide (NO 2 ), nitrogen monoxide (NO), vapor (H 2 O), hydrogen peroxide (H 2 O 2 ), acetic acid, hydrazine (N 2 H 4 ), ammonia (NH 3 ), silane (SiH 4 ), boran (BH 3 ), diboran (B 2 H 6 ) and phosphine (PH 3 ).

6. The method for manufacturing a cobalt-containing layer of claim 1 , wherein the deposition process comprises:
supplying the cobalt precursor on an intermediate layer on the substrate to form the cobalt-containing layer on the intermediate layer, and
the intermediate layer comprises a silicon oxide layer, a silicon nitride layer, a copper oxide layer, a titanium nitride layer, a titanium oxide layer, a tantalum nitride layer, a tantalum oxide layer, a ruthenium oxide layer, a zirconium oxide layer, a hafnium oxide layer or a lanthanum oxide layer.

7. The method for manufacturing a cobalt-containing layer of claim 1 , wherein:
R1 and R3 are each independently branched (C3-C4)alkyl, and
R2 is (C1-C2)alkyl.

8. The method for manufacturing a cobalt-containing layer of claim 1 , wherein R4, R5 and R6 are each independently (C1-C3)alkyl.

9. A method for manufacturing a semiconductor device, the method comprising:
forming an interlayer insulating layer on a substrate;
patterning the interlayer insulating layer to form a recess; and
forming a cobalt-containing layer on the recess,
wherein the forming of the cobalt-containing layer comprises performing a deposition process using a cobalt precursor comprising at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2:

wherein R1 and R3 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl, and
R2 is hydrogen, or substituted or unsubstituted, linear or branched (C1-C6)alkyl,

wherein R4, R5 and R6 are each independently substituted or unsubstituted, linear or branched (C1-C6)alkyl.

10. The method for manufacturing a semiconductor device of claim 9 , further comprising: forming a barrier layer directly on the recess and forming the cobalt-containing layer on the barrier layer,
wherein the barrier layer comprises at least one of a titanium nitride layer, a tungsten nitride layer or a tantalum nitride layer.

11. The method for manufacturing a semiconductor device of claim 9 , further comprising:
forming a metal layer on the cobalt-containing layer,
wherein the metal layer comprises a metal selected from the group consisting of aluminum, copper, tungsten and molybdenum.

12. The method for manufacturing a semiconductor device of claim 9 , further comprising:
patterning an upper portion of the substrate to form an active pattern;
forming a gate electrode crossing the active pattern; and
forming a source/drain region in an upper portion of the active pattern,
wherein the recess exposes the gate electrode or the source/drain region.

13. The method for manufacturing a semiconductor device of claim 9 , further comprising:
forming transistors on the substrate; and
forming contacts connected to the transistors,
wherein the interlayer insulating layer covers the contacts, and
the recess exposes at least one of the contacts.

14. The method for manufacturing a semiconductor device of claim 9 , wherein:
R1 and R3 are each independently branched (C3-C4)alkyl, and
R2 is (C1-C2)alkyl.

15. The method for manufacturing a semiconductor device of claim 9 , wherein R4, R5 and R6 are each independently (C1-C3)alkyl.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Soyoung
• Nihei Hiroshi
• Miyazaki Takamasa
• Satou Yousuke
• SUGIMOTO Kouhei
• Shirai Masashi
• Lim Jaesoon
• Kim Younsoo
• Cho Younjoung

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6338

  the reactions being activated by other means than plasma or thermal, e.g. photo-CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10W20/4437

  the principal metal being a transition metal · CPC title