Manganese barrier and adhesion layers for cobalt

Patent metadata

Field	Value
Publication number	US-2017330797-A1
Application number	US-201715592046-A
Country	US
Kind code	A1
Filing date	May 10, 2017
Priority date	May 13, 2016
Publication date	Nov 16, 2017
Grant date	—

Abstract

Provided herein are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film may be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate.

First claim

What is claimed is:

1 . A method comprising:
(a) providing a substrate having a feature comprising a feature opening; (b) forming a manganese-containing liner layer in the feature; and (c) after (b), exposing the substrate to a cobalt-containing precursor to at least partially fill the feature with cobalt.

2 . The method of claim 1 , wherein (c) comprises wholly filling the feature with cobalt.

3 . The method of claim 2 , further comprising heating the substrate to a temperature of at least 400° C. to anneal the cobalt.

4 . The method of claim 3 , further comprising reacting at least some manganese with cobalt during the heating of the substrate.

5 . The method of claim 3 , further comprising alloying at least some of the manganese with cobalt during the heating of the substrate.

6 . The method of claim 1 , wherein (b) comprises atomic layer deposition (ALD) or chemical vapor deposition (CVD) of an elemental manganese film in the feature.

7 . The method of claim 6 , wherein (b) further comprises heating the substrate to at least 350° C. to allow the elemental manganese film to react with a silicon oxide-containing underlayer to form a layer of manganese silicate.

8 . The method of claim 7 , wherein an exposed portion of the elemental manganese film is not converted to manganese silicate.

9 . The method of claim 1 , wherein (b) comprises atomic layer deposition (ALD) or chemical vapor deposition (CVD) of a manganese nitride film in the feature.

10 . The method of claim 9 , further comprising heating the substrate to at least 350° C. to allow manganese to react with a silicon-containing underlayer to form a layer of manganese silicate and to desorb nitrogen from the substrate.

11 . The method of claim 1 , further comprising, after (b) and before (c), exposing the substrate to nitrogen species to form a differential inhibition profile.

12 . The method of claim 11 , further comprising preferentially depositing cobalt in the one or more features in accordance with the differential inhibition profile.

13 . The method of claim 1 , wherein (c) comprises depositing a cobalt seed layer for a subsequent Co plating process.

14 . A method comprising:
(a) providing a substrate having a feature comprising a feature opening and having a dielectric silicon-containing sidewall; (b) forming an elemental manganese layer in the feature, wherein the elemental manganese layer is conformal to the feature; (c) after (b), converting a portion of the elemental manganese layer to a manganese silicate layer, allowing an exposed portion of the elemental manganese layer to remain unconverted; (d) filling the feature with cobalt; and (e) forming a cobalt-manganese alloy at the interface of cobalt and the manganese silicate layer.

Assignees

• Lam Res Corp

Inventors

• Lai Chiukin Steven
• Na Jeong-Seok
• Humayun Raashina
• Danek Michal
• Ashtiani Kaihan Abidi

Classifications

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/076

  in via holes or trenches · CPC title