Cobalt base film-forming method, cobalt base film-forming material, and novel compound

Patent metadata

Field	Value
Publication number	US-9428835-B2
Application number	US-201214349037-A
Country	US
Kind code	B2
Filing date	Oct 4, 2012
Priority date	Oct 7, 2011
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

First claim

The invention claimed is:

1. A method for forming a cobalt base film, the method comprising:
transporting bis(N,N′-diisopropyl-propionamidinate)cobalt to a film formation chamber; and
forming a cobalt base film on a substrate by decomposition of the bis(N,N′-diisopropyl-propionamidinate)cobalt transported to the film formation chamber;
wherein:
the film formation process comprises at least a first film formation process and a second film formation process;
the second film formation process occurs after the first film formation process;
an internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process;
in the first film formation process,
the film formation chamber is supplied with at least NH 3 and/or NH 3 product compound, and
the film formation chamber is not supplied with H 2 ;

in the second film formation process, the film formation chamber is supplied with at least NH 3 and/or NH 3 product compound, and H 2 ; and
(the H 2 )/(the NH 3 and/or NH 3 product compound) is 0.0001 to 2 (molar ratio).

2. The method for forming a cobalt base film according to claim 1 , wherein:
the bis(N,N′-diisopropyl-propionamidinate)cobalt is added to a solvent; and
the bis(N,N′-diisopropyl-propionamidinate)cobalt is transported by bubbling.

3. The method for forming a cobalt base film according to claim 2 , wherein the solvent is a hydrocarbon compound.

4. The method for forming a cobalt base film according to claim 2 , wherein the solvent is an ether compound.

5. The method for forming a cobalt base film according to claim 2 , wherein the solvent comprises N,N′-diisopropyl-propionamidine.

6. The method for forming a cobalt base film according to claim 1 , wherein the cobalt base film is formed by a chemical vapor deposition.

7. The method for forming a cobalt base film according to claim 1 , wherein the cobalt base film is formed by an atomic layer control growth method.

8. The method for forming a cobalt base film according to claim 1 , wherein the heating in which the substrate is heated under the NH 3 atmosphere occurs after the film formation process.

9. The method for forming a cobalt base film according to claim 1 , wherein the heating in which the substrate is heated under NH 3 and H 2 atmosphere occurs after the film formation process.

10. The method for forming a cobalt base film according to claim 1 , wherein the heating in which the substrate is heated under NH 3 atmosphere occurs before the first film formation process.

11. The method for forming a cobalt base film according to claim 1 , wherein the heating in which the substrate is heated under NH 3 and H 2 atmosphere occurs before the first film formation process.

Assignees

• Gas-Phase Growth Ltd
• Tokyo Electron Ltd

Inventors

• Machida Hideaki
• Ishikawa Masato
• Sudoh Hiroshi
• Kawano Yumiko
• IWAI Kazutoshi

Classifications

• C07F15/065

  without a metal-carbon linkage · CPC title

• C23C18/08 Primary

  characterised by the deposition of metallic material · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C23C18/04

  Pretreatment of the material to be coated (C23C18/06 takes precedence) · CPC title