Method for forming cobalt containing films

Patent metadata

Field	Value
Publication number	US-9487860-B2
Application number	US-201414537708-A
Country	US
Kind code	B2
Filing date	Nov 10, 2014
Priority date	Nov 10, 2014
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

Vapor deposition methods of cobalt-containing films by using cobalt carbonyl nitrosyl are disclosed.

First claim

We claim:

1. A method of forming a cobalt-containing layer on a substrate contained in a reactor, the method comprising:
heating the substrate to a temperature ranging from approximately 30° C. to approximately 300° C.;
producing a nucleation layer on the substrate by a first vapor deposition process having a first deposition rate below 2 nm/min by introducing a vapor of Co(CO) 3 (NO) and a reducing gas into the reactor; and
producing a remaining portion of the cobalt-containing layer on the nucleation layer by a second vapor deposition process having a second deposition rate greater than 2 nm/min by introducing the vapor of Co(CO) 3 (NO) and the reducing gas into the reactor,
wherein the first deposition rate increases to the second deposition rate by increasing the temperature of the substrate, by increasing a partial pressure of the vapor of Co(CO) 3 (NO), by increasing a pressure of the reactor, and/or by changing from an atomic layer or pulsed chemical vapor deposition process to a chemical vapor deposition process.

2. The method of claim 1 , wherein the reducing gas is H 2 or NH 3 .

3. The method of claim 1 , wherein the cobalt-containing layer is a cobalt film.

4. The method of claim 1 , further comprising annealing the nucleation layer under a reducing atmosphere at a temperature between 250° C. and 500° C.

5. The method of claim 1 , further comprising annealing the cobalt-containing layer under a reducing atmosphere at a temperature between 250° C. and 500° C.

Assignees

• L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventors

• Gatineau Satoko
• Girard Jean-Marc
• Blasco Nicolas
• Kimura Mikiko

Classifications

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• C23C16/50 Primary

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title