Schottky barrier diode and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11201250-B2
Application number	US-202016848826-A
Country	US
Kind code	B2
Filing date	Apr 14, 2020
Priority date	Apr 16, 2019
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.

First claim

What is claimed is:

1. A Schottky barrier diode comprising:
a substrate;
a first semiconductor layer formed on the substrate;
a buffer layer formed between the substrate and the first semiconductor layer;
a second semiconductor layer formed on the first semiconductor layer; and
a Schottky metal layer formed on the second semiconductor layer to form a Schottky barrier,
wherein the buffer layer is formed from a same material as the first semiconductor layer, and
wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.

2. The Schottky barrier diode of claim 1 , wherein
the first semiconductor layer is an n + type, and the second semiconductor layer is an n − type.

3. The Schottky barrier diode of claim 1 , wherein
the set value is thermal energy at room temperature (300K).

4. The Schottky barrier diode of claim 1 , further comprising
an insulating layer formed between the metal layer and the second semiconductor layer.

5. The Schottky barrier diode of claim 4 , further comprising
an ohmic metal layer formed on the first semiconductor layer after etching to the second semiconductor layer and the insulating layer at a portion thereof.

6. The Schottky barrier diode of claim 1 , wherein
the second semiconductor layer and the first semiconductor layer are partially etched under the Schottky metal layer.

7. A manufacturing method of a Schottky barrier diode, the manufacturing method comprising:
doping a first material on a substrate to form a first semiconductor layer;
doping a second material different from the first material on the first semiconductor layer to form a second semiconductor layer;
forming a Schottky metal layer on the second semiconductor layer such that a Schottky barrier is formed;
forming an insulating layer between the second semiconductor layer and the Schottky metal layer; and
partially etching the second semiconductor layer and the first semiconductor layer under the Schottky metal layer after forming the Schottky metal layer,
wherein a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a conduction band offset between a first semiconductor layer and a second semiconductor layer of same materials.

8. The manufacturing method of claim 7 , wherein
the first semiconductor layer is an n + type, and the second semiconductor layer is an n − type.

9. The manufacturing method of claim 7 , further comprising
forming an ohmic metal layer on the first semiconductor layer after etching to the second semiconductor layer and the insulating layer at a portion before forming the Schottky metal layer.

Assignees

• Electronics & Telecommunications Res Inst

Inventors

• Park Dong Woo
• Park Kyung Hyun
• Park Jeong Woo
• Shin Jun Hwan
• Lee Eui Su
• Kim Hyun Soo
• Moon Kiwon
• Lee Il Min

Classifications

• H10P50/646

  of Group III-V materials · CPC title

• H10D64/0124

  to Group III-V semiconductors · CPC title

• H10D8/051

  of Schottky diodes · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title

• H10D64/64

  Electrodes comprising a Schottky barrier to a semiconductor · CPC title