Nitride semiconductor template and ultraviolet led
US-2016380152-A1 · Dec 29, 2016 · US
Schottky barrier diode
US9412882B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9412882-B2 |
| Application number | US-201514918129-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 20, 2015 |
| Priority date | Nov 9, 2011 |
| Publication date | Aug 9, 2016 |
| Grant date | Aug 9, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
A Schottky barrier diode includes an n-type semiconductor layer including a Ga 2 O 3 -based compound semiconductor with n-type conductivity, and an electrode layer that is in Schottky-contact with the n-type semiconductor layer. A first semiconductor layer in Schottky-contact with the electrode layer and a second semiconductor layer having an electron carrier concentration higher than the first semiconductor layer are formed in the n-type semiconductor layer. The second semiconductor layer includes a β-Ga 2 O 3 substrate including a main plane rotated by an angle not less than 50° and not more than 90° with respect to a (100) plane thereof.
First claim
Opening claim text (preview).
What is claimed is: 1. A Schottky barrier diode, comprising: an n-type semiconductor layer comprising a Ga 2 O 3 -based compound semiconductor with n-type conductivity; and an electrode layer that is in Schottky-contact with the n-type semiconductor layer, wherein a first semiconductor layer in Schottky-contact with the electrode layer and a second semiconductor layer having an electron carrier concentration higher than the first semiconductor layer are formed in the n-type semiconductor layer, and wherein the second semiconductor layer comprises a β-Ga 2 O 3 substrate comprising a main plane rotated by an angle not less than 50° and not more than 90° with respect to a (100) plane thereof. 2. The Schottky barrier diode according to claim 1 , wherein a thickness of the first semiconductor layer is greater than a thickness of a depletion layer corresponding to a reverse withstand voltage. 3. The Schottky barrier diode according to claim 1 , wherein an electron carrier concentration in the first semiconductor layer is less than 1×10 17 /cm −3 . 4. The Schottky barrier diode according to claim 1 , wherein the electron carrier concentration in the second semiconductor layer is greater than 1×10 18 /cm −3 . 5. The Schottky barrier diode according to claim 3 , wherein the electron carrier concentration in the second semiconductor layer is greater than 1×10 18 /cm −3 . 6. The Schottky barrier diode according to claim 2 , wherein an electron carrier concentration in the first semiconductor layer is less than 1×10 17 /cm −3 . 7. The Schottky barrier diode according to claim 2 , wherein the electron carrier concentration in the second semiconductor layer is greater than 1×10 18 /cm −3 . 8. The Schottky barrier diode according to claim 6 , wherein the electron carrier concentration in the second semiconductor layer is greater than 1×10 18 /cm −3 .
Assignees
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Classifications
N-type · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
Crystal orientations · CPC title
- H10P14/2918Primary
being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title
using physical deposition, e.g. vacuum deposition or sputtering · CPC title
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Frequently asked questions
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- What does patent US9412882B2 cover?
- A Schottky barrier diode includes an n-type semiconductor layer including a Ga 2 O 3 -based compound semiconductor with n-type conductivity, and an electrode layer that is in Schottky-contact with the n-type semiconductor layer. A first semiconductor layer in Schottky-contact with the electrode layer and a second semiconductor layer having an electron carrier concentration higher than the first…
- Who is the assignee on this patent?
- Tamura Seisakusho Kk
- What technology area does this patent fall under?
- Primary CPC classification H10P14/2918. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).