Glass piece and methods of manufacturing glass pieces and semiconductor devices with glass pieces

Patent metadata

Field	Value
Publication number	US-11148943-B2
Application number	US-201815981393-A
Country	US
Kind code	B2
Filing date	May 16, 2018
Priority date	Mar 8, 2012
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

A semiconductor element is formed in a mesa portion of a semiconductor substrate. A cavity is formed in a working surface of the semiconductor substrate. The semiconductor substrate is brought in contact with a glass piece made of a glass material and having a protrusion. The glass piece and the semiconductor substrate are arranged such that the protrusion extends into the cavity. The glass piece is bonded to the semiconductor substrate. The glass piece is in-situ bonded to the semiconductor substrate by pressing the glass piece against the semiconductor substrate. During the pressing a temperature of the glass piece exceeds a glass transition temperature and the temperature and a force exerted on the glass piece are controlled to fluidify the glass material and after re-solidifying the protrusion completely fills the cavity.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor element in a mesa portion of a semiconductor substrate;
forming a cavity in a working surface of the semiconductor substrate;
bringing the semiconductor substrate in contact with a glass piece made of a glass material and having a protrusion, wherein the glass piece and the semiconductor substrate are arranged such that the protrusion extends into the cavity; and
bonding the glass piece to the semiconductor substrate, wherein the glass piece is in-situ bonded to the semiconductor substrate by pressing the glass piece against the semiconductor substrate, wherein during the pressing a temperature of the glass piece exceeds a glass transition temperature and the temperature and a force exerted on the glass piece are controlled to fluidify the glass material and after re-solidifying the protrusion completely fills the cavity,
wherein the glass material of the protrusion is fluidified during the pressing, and
wherein the glass material of the protrusion is solidified after the re-solidifying,
wherein the cavity in the working surface of the semiconductor substrate has a slope angle between 10 and 80 degrees, and the glass piece comprises a protrusion matching with the cavity having a slope angle between 10 and 80 degrees.

2. The method according to claim 1 , further comprising providing an adhesive material between the semiconductor substrate and the glass piece before bonding, wherein the glass piece is adhesive bonded to the semiconductor substrate through the adhesive material.

3. The method according to claim 1 , wherein:
the cavity in the working surface of the semiconductor substrate forms a grid, the cavity extending along and within kerf areas, wherein the cavity is wider that the kerf areas;
the glass piece comprises a protrusion forming a grid and matching with the grid formed by the cavity; the method further comprising:
separating, after the bonding, the semiconductor substrate in and along the kerf areas to obtain a plurality of semiconductor dies from the semiconductor substrate, each semiconductor die including a glass frame emerging from the protrusion of the glass piece.

4. The method according to claim 1 , further comprising thinning, after the bonding, the semiconductor substrate from a rear side opposite to a front side defined by the working surface.

5. The method of claim 1 , wherein the semiconductor element is one of a transistor, a diode, a field effect transistor, an IGBT, a logic circuit, a driver circuit, a processor circuit and a memory circuit.

6. A method of manufacturing a glass piece, the method comprising:
forming a mold substrate of a single-crystalline material by etching a sharp-angled cavity into a working surface of the mold substrate;
bringing a source material based on a glass in contact with the working surface provided with the sharp-angled cavity; and
pressing the source material and the mold substrate against each other,
wherein a temperature of the source material and a force exerted on the source material are controlled such that source material is fluidified and flows into the sharp-angled cavity,
wherein the sharp angles of the sharp angled cavity are disposed below the working surface,
wherein the sharp-angled cavity comprises a first region that vertically extends from the working surface of the mold substrate and a second region that connects with the first region and laterally extends away from the first region with an upper surface of the second region being separated from the working surface by a section of the mold substrate.

7. The method of claim 6 , wherein the source material is a powder, a glass frit, includes pellets, or a disk with a flat surface.

8. The method of claim 7 , wherein the source material is a disk with a flat surface, and wherein the disk is pressed with the flat surface against the working surface of the mold substrate.

9. The method according to claim 6 , further comprising controlling the temperature and the force to re-solidify the fluidified source material, the re-solidified source material forming a glass piece with a protrusion extending into the cavity.

10. The method according to claim 6 , further comprising controlling the temperature and the force to re-solidify the fluidified source material, the re-solidified source material forming a glass piece with a protrusion that fills the cavity completely.

11. The method according to claim 6 , wherein the source material is a material exhibiting a glass transition, and the temperature of the source material is controlled to exceed the glass transition temperature in the course of the pressing.

12. The method according to claim 6 , wherein:
the source material is a soda-lime glass, undoped silica, or silica doped with at least one dopant selected from the group consisting of boron B, sodium Na, calcium Ca, potassium K and aluminum Al; or
the source material is a polymer selected from the group consisting of polynorbornene, polystyrene, polycarbonate, polyimide, and benzocyclobutene.

13. The method according to claim 6 , wherein the glass piece is in-situ bonded to the mold substrate during pressing.

14. The method according to claim 6 , wherein the glass piece and the mold substrate form a laminate or a bonded composite after re-solidifying.

15. The method according to claim 6 , wherein the mold substrate is made of a single-crystalline semiconductor.

16. The method according to claim 6 , wherein the mold substrate is made of a single-crystalline material selected from the group consisting of silicon, silicon carbide and gallium nitride.

17. The method according to claim 6 , further comprising removing, after re-solidifying, the mold substrate using an etch process that removes the material of the mold substrate selectively against the material of the glass piece.

18. The method according to claim 6 , further comprising:
providing the mold substrate or the source material with a non-sticking layer before bringing the source material in contact with the working surface of the mold substrate; and
separating the mold substrate and the glass piece in a nondestructive way after re-solidification of the source material.

19. The method according to claim 6 , wherein the cavity has a width of 10 micrometer or more and of 2 millimeter or less.

20. A method of manufacturing a glass piece, the method comprising:
forming a mold substrate of a single-crystalline material by etching a sharp-angled cavity into a working surface of the mold substrate;
bringing a source material based on a glass in contact with the working surface provided with the sharp-angled cavity; and
pressing the source material and the mold substrate against each other,
wherein a temperature of the source material and a force exerted on the source material are controlled such that source material is fluidified and flows into the sharp-angled cavity,
wherein the sharp angles of the sharp angled cavity are disposed below the working surface, and
wherein the sharp angles of the sharp angled cavity comprise a corner between first and second planar walls of the sharp angled cavity, wherein the first planar wall is disposed below and runs parallel to the working surface of the substrate, and wherein the second planar wall is disconnected from and runs perpendicular to the working surface of the substrate.

Assignees

• Infineon Technologies Ag

Inventors

• Breymesser Alexander
• Brockmeier Andre
• Von Koblinski Carsten
• Santos Rodriguez Francisco Javier

Classifications

• H10W74/43

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10W74/134

  the encapsulations being in grooves in the semiconductor body · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10D84/01 Primary

  Manufacture or treatment · CPC title

• B81C99/008 Primary

  separating the processed structure from a mother substrate · CPC title