Method for producing product having uneven microstructure on surface thereof
US-9494857-B2 · Nov 15, 2016 · US
Methods of forming molds and methods of forming articles using said molds
US9102083B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9102083-B2 |
| Application number | US-67521708-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 5, 2008 |
| Priority date | Sep 6, 2007 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A method of forming a working mold including: placing a substrate ( 610 ) on an electrode in a chamber, the substrate having at least a first structured surface ( 620 ) and the substrate including a thermoset polymeric material; introducing a release ( 630 ) layer forming gas into the chamber, wherein the release layer forming gas includes silicon containing gas and oxygen gas in an atomic ratio of not greater than about 200; providing power to the electrode to create a plasma of the release layer forming gas within the chamber; and depositing a release layer formed from the release layer forming gas on at least the first structured surface of the substrate to form a working mold.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a molded article comprising: placing an untreated working mold on an electrode in a chamber, the untreated working mold having at least a first structured surface and the working mold comprising a thermoset polymeric material; introducing a release layer forming gas into the chamber, wherein the release layer forming gas is a silicon containing gas or a mixture consisting of a silicon containing gas and oxygen gas in an atomic ratio of…
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Operations & Transport · mapped topic
Physics · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
- B29C33/58Primary
Operations & Transport · mapped topic
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- What does patent US9102083B2 cover?
- A method of forming a working mold including: placing a substrate ( 610 ) on an electrode in a chamber, the substrate having at least a first structured surface ( 620 ) and the substrate including a thermoset polymeric material; introducing a release ( 630 ) layer forming gas into the chamber, wherein the release layer forming gas includes silicon containing gas and oxygen gas in an atomic rati…
- Who is the assignee on this patent?
- David Moses M, Mao Guoping, Benson Jr Olester, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification B29C33/58. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).