Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11145730-B2
Application number	US-201916678642-A
Country	US
Kind code	B2
Filing date	Nov 8, 2019
Priority date	May 25, 2017
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

A semiconductor device includes a substrate, a first gate structure, a plurality of first gate spacers, a second gate structure, and a plurality of second gate spacers. The substrate has a first fin structure and a second fin structure. The first gate structure is over the first fin structure, in which the first gate structure includes a first high dielectric constant material and a first metal. A bottom surface of the first high dielectric constant material is higher than bottom surfaces of the first gate spacers. The second gate structure is narrower than the first gate structure and over the second fin structure, in which the second gate structure includes a second high dielectric constant material and a second metal. A bottom surface of the second high dielectric constant material is lower than bottom surfaces of the second gate spacers.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate having a first fin structure and a second fin structure;
a first gate structure over the first fin structure, wherein the first gate structure comprises a first high dielectric constant material and a first metal over the first high dielectric constant material;
a plurality of first gate spacers on opposite sides of the first gate structure, wherein a bottom surface of the first high dielectric constant material is higher than bottom surfaces of the first gate spacers;
a second gate structure narrower than the first gate structure and over the second fin structure, wherein the second gate structure comprises a second high dielectric constant material and a second metal over the second high dielectric constant material; and
a plurality of second gate spacers on opposite sides of the second gate structure, wherein a bottom surface of the second high dielectric constant material is lower than bottom surfaces of the second gate spacers and is in contact with the second fin structure.

2. The semiconductor device of claim 1 , wherein the second high dielectric constant material of the second gate structure contacts the second fin structure, and the first high dielectric constant material of the first gate structure is separated from the first fin structure.

3. The semiconductor device of claim 1 , further comprising a dielectric layer over the substrate, wherein the dielectric layer has a first portion extending from a position between the first gate spacers and the first fin structure to a position between the first gate structure and the first fin structure.

4. The semiconductor device of claim 3 , wherein the dielectric layer has a second portion between the second gate spacers and the second fin structure, and the second portion of the dielectric layer is in contact with the second high dielectric constant material of the second gate structure.

5. The semiconductor device of claim 3 , wherein a position between the second gate structure and the second fin structure is free of the dielectric layer.

6. The semiconductor device of claim 1 , wherein the first high dielectric constant material of the first gate structure is separated from the first gate spacers, and the second high dielectric constant material of the second gate structure is in contact with the second gate spacers.

7. The semiconductor device of claim 6 , wherein the first high dielectric constant material of the first gate structure is separated from the first gate spacers by a dielectric layer.

8. A semiconductor device, comprising:
a substrate having a first fin structure and a second fin structure;
a first gate structure over the first fin structure, wherein the first gate structure comprises a first high dielectric constant material and a first metal over the first high dielectric constant material;
a plurality of first gate spacers on opposite sides of the first gate structure, wherein an entirety of the first gate spacers is separated from the first high dielectric constant material of the first gate structure by at least one material that is different than the first gate spacers;
a second gate structure narrower than the first gate structure over the second fin structure, wherein the second gate structure comprises a second high dielectric constant material and a second metal over the second high dielectric constant material; and
a plurality of second gate spacers on opposite sides of the second gate structure, wherein the second gate spacers are in contact with an upper portion of a sidewall of the second high dielectric constant material and is separated from a lower portion of the sidewall of the second high dielectric constant material.

9. The semiconductor device of claim 8 , wherein the second high dielectric constant material of the second gate structure contacts the second fin structure, and the first high dielectric constant material of the first gate structure is separated from the first fin structure.

10. The semiconductor device of claim 8 , wherein the at least one material is a dielectric layer.

11. The semiconductor device of claim 10 , wherein the dielectric layer extends from a sidewall of the first high dielectric constant material of the first gate structure to a bottom surface of the first high dielectric constant material of the first gate structure.

12. The semiconductor device of claim 8 , further comprising a dielectric layer under the second gate spacers, wherein the lower portion of the second high dielectric constant material is in contact with the dielectric layer.

13. The semiconductor device of claim 12 , wherein the dielectric layer is further under the first gate spacers and the first gate structure.

14. The semiconductor device of claim 8 , further comprising:
a first dielectric layer between the first gate structure and the first gate spacers; and
a second dielectric layer between the first gate spacers and the first fin structure.

15. The semiconductor device of claim 14 , wherein the first dielectric layer and the second dielectric layer are made of the same material.

16. A semiconductor device, comprising:
a substrate having a first region and a second region;
a first gate structure over the substrate within the first region, wherein the first gate structure comprises a first high dielectric constant material and a first metal over the first high dielectric constant material;
a plurality of first gate spacers on opposite sides of the first gate structure;
a second gate structure over the substrate within the second region, wherein the second gate structure comprises a second high dielectric constant material and a second metal over the second high dielectric constant material;
a plurality of second gate spacers on opposite sides of the second gate structure, the second gate spacers being separated by a distance shorter than a distance separating the first gate spacers;
a first dielectric layer extending from a position under one of the first gate spacers to a position below the first gate structure, wherein the first dielectric layer is below and in contact with bottom surfaces of the first gate spacers; and
a second dielectric layer has a lateral portion and a vertical portion extending upwardly from an end of the lateral portion, wherein the vertical portion is laterally between the first gate spacers and the first gate structure, and the lateral portion is vertically between the first gate structure and the first dielectric layer.

17. The semiconductor device of claim 16 , wherein the first dielectric layer is under the second gate spacers.

18. The semiconductor device of claim 17 , wherein a bottom surface of the first high dielectric constant material of the first gate structure is higher than a top surface of the first dielectric layer, and a bottom surface of the second high dielectric constant material of the second gate structure is lower than the top surface of the first dielectric layer.

19. The semiconductor device of claim 16 , wherein the second high dielectric constant material of the second gate structure is in contact with the second gate spacers.

20. The semiconductor device of claim 16 , wherein a bottom surface of the first high dielectric constant material of the first gate structure is higher than a bottom surface of the second high dielectric constant material of the second gate structure.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiang Hsin-Che
• Tzeng Ju-Yuan
• Liang Chun-Sheng
• Wang Shu-Hui
• Yeh Chih-Yang
• Yeh Jeng-Ya David

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10D84/853

  comprising FinFETs · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/0184

  Manufacturing their gate sidewall spacers · CPC title

• H10D84/83

  of only insulated-gate FETs [IGFET] · CPC title