Semiconductor device and method of forming the same

Patent metadata

Field	Value
Publication number	US-9899491-B2
Application number	US-201615182620-A
Country	US
Kind code	B2
Filing date	Jun 15, 2016
Priority date	May 16, 2016
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
a first gate structure disposed on the substrate, wherein the first gate structure comprises a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another sequentially on the substrate; and
a second gate structure disposed on the substrate, wherein the second gate structure comprises the barrier layer, the first work function layer and the conductive layer stacked one over another sequentially on the substrate, wherein a portion of the first work function layer in the first gate structure has a smaller thickness than a thickness of a portion of the first work function layer in the second gate structure, and the first gate structure is separated from the second gate structure, wherein the first work function layer and the second work function layer comprises different materials respectively, and the first work function layer directly contacts the second work function layer, wherein the first work function layer is made of tantalum nitride, and the second work function layer is made of titanium nitride, wherein the portion of the first work function layer in the second gate structure directly contacts the conductive layer in the second gate structure, and the second work function layer in the first gate structure is disposed between the first work function layer and the conductive layer in the first gate structure.

2. The semiconductor device of claim 1 , further comprising:
a first spacer disposed on the substrate and surrounding the first gate structure and the second gate structure.

3. The semiconductor device of claim 1 , wherein the first work function layer in the first gate structure has a thickness in the range of from 5 angstroms to 7 angstroms when the thickness of the first work function layer in the second gate structure is 10 angstroms.

4. The semiconductor device of claim 1 , wherein the first work function layer and the second work function layer have different conductivity types respectively.

5. The semiconductor device of claim 1 , further comprising:
a dielectric layer disposed on the substrate and comprising a gate trench, wherein the first gate structure and the second gate structure are both disposed in the gate trench.

Assignees

• United Microelectronics Corp

Inventors

• Su Po Wen
• Wu Zhen
• Chou Hsiao Pang
• Yeh Chiu Hsien
• Lu Shui Yen
• Chen Jian Wei

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H01L29/66545

  Electricity · mapped topic

• H01L21/823462

  Electricity · mapped topic

• H01L29/512 Primary

  Electricity · mapped topic

• H01L21/82345

  Electricity · mapped topic