Method for die-level unique authentication and serialization of semiconductor devices using electrical and optical marking

US11133206B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11133206-B2
Application numberUS-201916528099-A
CountryUS
Kind codeB2
Filing dateJul 31, 2019
Priority dateApr 15, 2019
Publication dateSep 28, 2021
Grant dateSep 28, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for marking a semiconductor substrate at the die level for providing unique authentication and serialization includes projecting a first pattern of actinic radiation onto a layer of photoresist on the substrate using mask-based photolithography, the first pattern defining semiconductor device structures and projecting a second pattern of actinic radiation onto the layer of photoresist using direct-write projection, the second pattern defining a unique wiring structure having a unique electrical signature.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of marking a substrate, the method comprising: forming a layer of photoresist on a substrate; projecting a first pattern of actinic radiation onto the layer of photoresist using a mask-based photolithography system, the first pattern defining semiconductor device structures; projecting a second pattern of actinic radiation onto the layer of photoresist using a direct-write projection system, the second pattern defining a unique wiring structure having a unique electrical signature and related to unique marking of the substrate; developing the layer of photoresist to generate a relief pattern; and forming the unique wiring structure having the unique electrical signature. 2. The method of claim 1 , wherein the unique wiring structure is an electrical line. 3. The method of claim 1 , further comprising varying electrical resistance of the unique wiring structure from die to die by varying shape of the unique wiring structure. 4. The method of claim 1 , wherein a shape of the unique wiring structure is varied by varying at least one of line length, line width, line path, line turns, and line cross-sectional area. 5. The method of claim 1 , wherein the unique wiring structure is a matrix of conductive paths, wherein each conductive path is varied in geometry providing one of multiple electrical resistance values. 6. The method of claim 1 , wherein the unique electrical signature includes a unique resistance or capacitance value. 7. The method of claim 1 , wherein the unique wiring structure is positioned on a corresponding die at a location separated from die circuitry. 8. The method of claim 1 , wherein placement of blocks on conductive paths is varied by coordinate location to define different graphical arrangements of the unique wiring structure. 9. The method of claim 1 , wherein the first pattern is projected subsequent to projecting the second pattern. 10. The method of claim 1 , wherein the second pattern is projected subsequent to projecting the first pattern. 11. The method of claim 1 , wherein the unique wiring structure represents a serial number or date of manufacture, chip specifications, or generation of technology.

Assignees

Inventors

Classifications

  • for identification or tracking · CPC title

  • alphanumeric information, e.g. words, letters or serial numbers · CPC title

  • using lasers · CPC title

  • for non-wireless electrical read out · CPC title

  • Marks applied to devices, e.g. for alignment or identification · CPC title

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Frequently asked questions

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What does patent US11133206B2 cover?
A method for marking a semiconductor substrate at the die level for providing unique authentication and serialization includes projecting a first pattern of actinic radiation onto a layer of photoresist on the substrate using mask-based photolithography, the first pattern defining semiconductor device structures and projecting a second pattern of actinic radiation onto the layer of photoresist …
Who is the assignee on this patent?
Tokyo Electron Ltd
What technology area does this patent fall under?
Primary CPC classification H10P72/0614. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 28 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).